TITLE

The effect of an additional infrared laser on the carrier collection efficiency of InAs quantum dots

AUTHOR(S)
Moskalenko, E. S.; Karlsson, K. F.; Donchev, V.; Holtz, P. O.; Schoenfeld, W. V.; Petroff, P. M.
PUB. DATE
June 2004
SOURCE
Applied Physics Letters;6/14/2004, Vol. 84 Issue 24, p4896
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a micro-photoluminescence study on the influence of single and multi-quantum dots (QDs) on the exposure by a low-energy laser, in addition to the principal exciting laser. At low temperatures, the presence of the low-energy laser effectively quenches the single QD luminescence. This can be explained in terms of an induced screening of a built-in electric field, which plays an important role as a carrier capture mechanism. The influence of the low-energy laser is successively decreasing when the capture efficiency is increased either by elevated crystal temperature or by increased QD densities, full consistent with the proposed model. © 2004 American Institute of Physics.
ACCESSION #
13269863

 

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