TITLE

Organic nonvolatile memory by controlling the dynamic copper-ion concentration within organic layer

AUTHOR(S)
Ma, Liping; Xu, Qianfei; Yang, Yang
PUB. DATE
June 2004
SOURCE
Applied Physics Letters;6/14/2004, Vol. 84 Issue 24, p4908
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Copper (Cu) migration into semiconductor materials like silicon is a well-known and troublesome phenomenon often causing adverse effect on devices. Generally a diffusion barrier layer is added to prevent Cu metallization. We demonstrate an organic nonvolatile memory device by controlling the Cu-ion (Cu+) concentration within the organic layer. When the Cu+ concentration is high enough, the device exhibits a high conductive state due to the metallization effect. When the Cu+ concentration is low, the device displays a low conductance state. These two states differ in their electrical conductivity by more than seven orders of magnitude and can be precisely switched by controlling the Cu+ concentration through the application of external biases. The retention time of both states can be more than several months, and the device is promising for flash memory application. Discussions about the device operation mechanism are provided. © 2004 American Institute of Physics.
ACCESSION #
13269859

 

Related Articles

  • Spin polarized current through Cu-DNA modulated by a gate voltage. Kang, D. W.; Hao, X. P.; Li, X. Z.; Li, L. B.; Xie, S. J. // Applied Physics Letters;2/18/2013, Vol. 102 Issue 7, p072410 

    Spin polarized current through DNA molecule doped with one Cu2+ ion is studied. It is found that the spin polarization is sensitive to the position of the Cu2+ ion doping. In order to obtain a steady and large spin polarization, the metal ion should be doped at the end of the DNA molecule. We...

  • The role of one-dimensional diffusion in a growth model of the surface of a Kossel�s crystal. Boiko, A. M.; Suris, R. A. // Semiconductors;Mar2006, Vol. 40 Issue 3, p367 

    The kinetic mechanism of defect formation on a vicinal surface misoriented in two directions, in the case of molecular-beam epitaxy, is studied. These defects are two adatoms stuck together in a potential trench near the step edge. The effects of the surface parameters, as well as growth rate on...

  • Self-calibrating Approach for Non-Contact Electrical Doping Profiling. Marinskiy, D.; Edelman, P.; Almeida, C.; Polisski, G.; D’Amico, J.; Wilson, M.; Jastrzebski, L.; Lagowski, J. // AIP Conference Proceedings;2005, Vol. 788 Issue 1, p249 

    We present a self-calibrating version of non-contact electrical doping profiling that is a refinement of our method based on monitoring of the decays of two voltages during the collapse of deep depletion. Small signal ac-photovoltage, appropriately calibrated, provides a measure of the depletion...

  • FT-IR, Raman and UV–VIS spectroscopic studies of copper doped 3Bi2O3 ·B2O3 glass matix. Ardelean, Ioan; Cora, Simona // Journal of Materials Science: Materials in Electronics;Jun2008, Vol. 19 Issue 6, p584 

    FT-IR, Raman and UV–VIS experimental results were presented for xCuO·(100- x)[3Bi2O3·B2O3] glass system, where 0 ≤ x ≤ 50 mol%. The FT-IR measurements indicate the presence in xCuO·(100- x)[3Bi2O3·B2O3] glasses of BO3, BO4 units, BiO3 pyramidal and distorted BiO6...

  • Complex Formation of Copper(II) Ions with Galactaric Acid. Bolotin, S. N.; Frolov, V. Yu.; Panyushkin, V. T. // Russian Journal of General Chemistry;Feb2004, Vol. 74 Issue 2, p219 

    Complex formation of copper(II) ions with the galactarate ion [Gala]2- in aqueous solution was studied by means of potentiometric titration. Stability constants of the [CuGala] and [Cu(Gala)2]2- complexes were determined. A complex compound was synthesized electrochemically and isolated from a...

  • Oxidation state of copper ions in (La0.7Sr0.3)(Mn1 − x Cux)O3 ± δ ceramics and their magnetic properties. Belous, A.; V’yunov, O.; Yanchevskii, O.; Tovstolytkin, A.; Golub, V. // Inorganic Materials;Mar2006, Vol. 42 Issue 3, p286 

    Bulk ceramic samples of (La0.7Sr0.3)(Mn1 − x Cux)O3 ± δ manganites are prepared by solid-state reactions. The unit-cell parameters and Mn-O bond distances in the manganites are determined using the Rietveld profile analysis method, and their magnetic properties are studied with the...

  • Copper-induced dielectric breakdown in silicon oxide deposited by plasma-enhanced chemical vapor deposition using trimethoxysilane. Takeda, Ken-ichi; Ryuzaki, Daisuke; Mine, Toshiyuki; Hinode, Kenji; Yoneyama, Ryo // Journal of Applied Physics;8/15/2003, Vol. 94 Issue 4, p2572 

    The barrier mechanism against copper-ion diffusion in silicon-oxide films deposited by plasma-enhanced chemical vapor deposition (PECVD) using trimethoxysilane (TMS) and nitrous (oxide N[SUB2]O) chemistry (PE-TMS oxide) was studied. It was found that the flow ratio of TMS gas to (N[SUB2]O gas...

  • High frequency components of current fluctuations in semiconductor tunneling barriers. Oriols, Xavier; Martı´n, Ferran; Sun˜e´, Jordi // Applied Physics Letters;5/27/2002, Vol. 80 Issue 21, p4048 

    The power spectral density of current noise in phase-coherent semiconductor tunneling scenarios is studied in terms of Bohm trajectories associated to time-dependent wave packets. In particular, the influence of the particles reflected by the barrier on the noise spectrum is analyzed. An...

  • Conductivity degradation in oxygen-aged polypyrrole. Tansley, T. L.; Maddison, D. S. // Journal of Applied Physics;6/1/1991, Vol. 69 Issue 11, p7711 

    Presents a study which examined the conductivity of doped polypyrrole. Description of conductivity degradation in polypyrrole; Characteristics of the adsorption process; Effects of film thickness.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics