Terahertz emission due to interminiband resonant Zener tunneling in wide-miniband GaAs/Al0.3Ga0.7As superlattices

Shimada, Y.; Sekine, N.; Hirakawat, K.
June 2004
Applied Physics Letters;6/14/2004, Vol. 84 Issue 24, p4926
Academic Journal
We have investigated terahertz (THz) emission induced by high-field electron transport in biased wide-miniband GaAs/Al0.3Ga0.7As superlattices. With increasing bias electric fields, two distinct regimes are observed in the bias-field dependence of the emitted THz intensity. These two regimes are attributed to the intraminiband transport and interminiband Zener tunneling regimes, respectively. In the Zener tunneling regime, quasiperiodic structures are observed in the bias field dependence of the emitted THz intensity and are identified to be due to the resonant Zener tunneling between the Wannier–Stark ladders associated with the ground and excited minibands. © 2004 American Institute of Physics.


Related Articles

  • Interband tunneling in polytype GaSb/AlSb/InAs heterostructures. Luo, L. F.; Beresford, R.; Wang, W. I. // Applied Physics Letters;11/6/1989, Vol. 55 Issue 19, p2023 

    Polytype heterostructures of GaSb/AlSb/InAs show interband tunneling due to the 0.1 eV overlap of the InAs conduction band and the GaSb valence band. This broken-gap configuration results in a novel mechanism for negative differential resistance that has potential applications in high-speed...

  • Zener tunneling in semiconductors under nonuniform electric fields. Vandenberghe, William; Sorée, Bart; Magnus, Wim; Groeseneken, Guido // Journal of Applied Physics;Mar2010, Vol. 107 Issue 5, p054520-1 

    Recently, a renewed interest in Zener tunneling has arisen because of its increasing impact on semiconductor device performance at nanometer dimensions. In this paper we evaluate the tunnel probability under the action of a nonuniform electric field using a two-band model and arrive at...

  • Universality of Zener tunneling in homojunction p-n diodes. Majumdar, Amlan; Lauer, Isaac; O'Regan, Terrance // Journal of Applied Physics;Aug2010, Vol. 108 Issue 2, p024501 

    We show that in homojunction p-n diodes made of semiconductors with unequal electron and hole effective masses, Zener tunneling is approximately universal, but not perfectly universal, as a function of effective tunneling width, where the effective tunneling width takes the effects of band...

  • Mechanism for excess noise in mixed tunneling and avalanche breakdown of silicon. Pan, Andrew; Dee-Son Pan; Chi On Chui // Applied Physics Letters;6/28/2010, Vol. 96 Issue 26, p263503 

    We propose a mechanism to explain the excess noise observed in silicon p-n junctions biased at the onset of mixed tunneling and avalanche breakdown. Electrons tunneling into different conduction valleys are treated as separate reaction channels with different impact ionization rates, due to...

  • Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode. Saffarzadeh, Alireza; Daqiq, Reza // Journal of Applied Physics;Oct2009, Vol. 106 Issue 8, p084308 

    We study theoretically the quantum size effects of a magnetic resonant tunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that the spin-tunneling times may oscillate and a great...

  • Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling. Alimardania, Nasir; Conley Jr., John F. // Applied Physics Letters;8/25/2014, Vol. 105 Issue 8, p1 

    Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al2O3-Ta2O5 bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant...

  • Resonant magneto-tunneling through shallow impurity states in double barrier heterostructures. Gutierrez, H. Paredes; Porras-Montenegro, N.; Arce, J. C.; Latge, A. // Journal of Applied Physics;5/1/2004, Vol. 95 Issue 9, p4890 

    A theoretical study is presented of the effects of in-plane magnetic fields on the I–V characteristic curves associated with resonant electron tunneling through shallow impurity states in GaAs/(Al,Ga)As double-barrier heterostructures. A simple one-band tight-binding Hamiltonian is used...

  • Piezoelectric-induced current asymmetry in [111] InGaAs/InAlAs resonant tunneling diodes for.... Hernandez, J.M.; Izpura, I. // Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p773 

    Examines the piezoelectric-induced current asymmetry in indium gallium arsenide/indium aluminum arsenide resonant tunneling diodes. Formation of accumulation and depletion regions in the contact layers; Reduction of resonance voltages for forward and reverse bias; Distribution of the...

  • Quantitative resonant tunneling spectroscopy: Current-voltage characteristics of precisely characterized resonant tunneling diodes. Reed, M. A.; Frensley, W. R.; Duncan, W. M.; Matyi, R. J.; Seabaugh, A. C.; Tsai, H.-L. // Applied Physics Letters;3/27/1989, Vol. 54 Issue 13, p1256 

    A systematic comparison of precisely characterized resonant tunneling structures is presented. A self-consistent band bending calculation is used to model the experimentally observed resonant peak positions. lt is found that the peak positions can be accurately modeled if the nominal...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics