Low-temperature growth and properties of ZnO nanowires

Wang, Xuan; Li, Qingwen; Liu, Zhibo; Zhang, Jin; Liu, Zhongfan; Wang, Rongming
June 2004
Applied Physics Letters;6/14/2004, Vol. 84 Issue 24, p4941
Academic Journal
ZnO nanowires were obtained through evaporation of zinc powders under a low temperature of 400 °C. These ZnO nanowires, in the diameter of ∼10 nm, were long and curved with lengths of tens of micrometers. High-resolution transmission electron microscopy showed these ZnO nanowires were mostly crystalline structure; however, the kink parts contained dislocations and stacking faults. Furthermore, the movement of dislocations was observed in the kink parts under e-beam irradiation. Photoluminescence and Raman spectra show that there exist oxygen vacancies in the ZnO nanowires. Possible reasons for the growth and properties of ZnO nanowires were discussed. © 2004 American Institute of Physics.


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