Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features

Martin-Bragado, I.; Jaraiz, M.; Castrillo, P.; Pinacho, R.; Rublo, J. E.; Barbolla, J.
June 2004
Applied Physics Letters;6/14/2004, Vol. 84 Issue 24, p4962
Academic Journal
The atomistic physically based kinetic Monte Carlo method has been used in conjunction with the binary collision approximation (BCA) to elucidate the implant mechanisms most relevant for modeling transient-enhanced diffusion (TED). For the cases studied, we find that: (i) The spatial correlation of the interstitial, vacancy (I,V) Frenkel pairs is not critical, (ii) the interstitial supersaturation in simulations which include full I, V profiles or only the net I–V is the same, (iii) quick and noisy BCA implant I, V distributions can be directly used (or after smoothing them out) as they can still yield accurate annealing simulations, and (iv) when there is an impurity concentration comparable to the net I–V excess, the full I and V profiles have to be used in order to correctly reproduce the impurity clustering/deactivation. Finally, some practical implications for TED simulations are drawn. © 2004 American Institute of Physics.


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