Colossal magnetoresistance effect of electron-doped manganese oxide thin film La1-xTexMnO3 (x=0.1,0.15)

Guotai Tan; Zhang, X.; Zhenghao Chen
June 2004
Journal of Applied Physics;6/1/2004, Vol. 95 Issue 11, p6322
Academic Journal
In this study, electron-doped manganese oxide thin films La1-xTexMnO3 (x=0.1,0.15) have been fabricated and their magnetic properties and colossal magnetoresistance effect have been investigated. The experimental results show that the thin films have a high metal–insulator transition temperature TMI of ∼300 K and a large magnetoresistance ratio of ∼80% at 4 T. In addition, the resistivity of thin films has a similar change of an on–off function near room temperature and this change might be advantageous in technological application of La1-xTexMnO3 materials. © 2004 American Institute of Physics.


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