Optical nonlinearity of monodispersed, capped ZnS quantum particles

Nikesh, V. V.; Dharmadhikari, Aditya; Ono, Hiroshi; Nozaki, Shinji; Kumar, G. Ravindra; Mahamuni, Shailaja
June 2004
Applied Physics Letters;6/7/2004, Vol. 84 Issue 23, p4602
Academic Journal
ZnS quantum dots are synthesized by a high-temperature chemical route with narrow size distribution at diameters of 1.4 and 1.8 nm. Significantly small size dispersion of 1.4-nm-sized ZnS quantum dots is vivid from the transmission electron microscopic measurements. The nonlinear absorption is measured at wavelengths 532 and 520 nm using a picosecond laser in an open aperture z-scan setup. The measured two-photon absorption coefficients are 0.08 and 0.2 cm/GW for smaller and larger nanoparticles. Two photon absorption cross sections for nanoparticles are about six orders of magnitude larger than bulk ZnS. © 2004 American Institute of Physics.


Related Articles

  • Theoretical and experimental studies of stressed nanoparticles of II-VI semiconductors. Ferreira, D. Lourençoni; Silva, F. Oliveira; Viol, L. Cristina de Souza; Licínio, P.; Schiavon, M. Antônio; Alves, J. Luiz Aarestrup // Journal of Chemical Physics;1/7/2010, Vol. 132 Issue 1, p014107 

    A theoretical and experimental study of isolated nanoparticles of II-VI semiconductor materials has been done. Using the framework of the effective mass model, the optical absorption spectrum of distributions of spherical quantum dots, freestanding, and under compressive or tensile stress, has...

  • Renormalization of the energy spectrum of quantum dots under vibrational resonance conditions: Persistent hole burning spectroscopy. Kruchinin, S.; Fedorov, A. // Optics & Spectroscopy;Jan2006, Vol. 100 Issue 1, p41 

    A theory of photophysical burning of spectral holes in an inhomogeneously broadened light absorption profile of spherical quantum dots under vibrational resonance conditions is developed. The energy spectrum and the eigenfunctions of polaron-like excitations that arise in a quantum dot when the...

  • Effects of a Gaussian size distribution on the absorption spectra of III-V semiconductor quantum dots. Kumar, Subindu; Biswas, Dipankar // Journal of Applied Physics;Oct2007, Vol. 102 Issue 8, p084305 

    The advancement in the fabrication of low-dimensional semiconductor structures has made it possible to grow zero-dimensional electron-hole systems called quantum dots (QDs). In recent years, there have been extensive studies on III-V semiconductor QDs. In this paper, we have formulated the...

  • Electronic and Optical Properties of Group-III-Nitride Semiconductor Quantum Dots. Mourad, D.; Schulz, S.; Czycholl, G. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p285 

    Embedded semiconductor quantum dots (QDs) based on group-III-nitrides exist in the zincblende or the wurtzite structure. To model the electronic structure of these nanostructures, we start from a tight-binding (TB) model for the bulk system. Two different approaches are used, namely the...

  • Terahertz detection with tunneling quantum dot intersublevel photodetector. X. H. Su; J. Yang; Bhattacharya, P.; Ariyawansa, G.; Perera, A. G. U. // Applied Physics Letters;7/17/2006, Vol. 89 Issue 3, p031117 

    The characteristics of a tunnel quantum dot intersublevel photodetector, designed for the absorption of terahertz radiation, are described. The absorption region consists of self-organized In0.6Al0.4As/GaAs quantum dots with tailored electronic properties. Devices exhibit spectral response from...

  • Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy. Kaniewska, M.; Engstr�m, O.; Kaczmarczyk, M. // Journal of Electronic Materials;Jun2010, Vol. 39 Issue 6, p766 

    The coexistence of quantum confined energy levels and defect energy levels in quantum dot (QD) structures may cause difficulties in distinguishing between their different origin when using deep-level transient spectroscopy (DLTS). Using InAs/GaAs QDs as demonstration vehicles, we present...

  • Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots. Shatalina, E. S.; Blokhin, S. A.; Nadtochy, A. M.; Payusov, A. S.; Savelyev, A. V.; Maximov, M. V.; Zhukov, A. E.; Ledentsov, N. N.; Kovsh, A. R.; Mikhrin, S. S.; Ustinov, V. M. // Semiconductors;Oct2010, Vol. 44 Issue 10, p1308 

    With the help of the photocurrent spectroscopy, the mechanism of emission of charge carriers from energy levels of the (In,Ga)As/(Al,Ga)As quantum dots of different design are studied. Thermal activation is shown to be the main mechanism of carrier emission from the quantum dots for the isolated...

  • Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors. Kim, D. Y.; Kim, G. S.; Jeon, S. M.; Cho, M. Y.; Choi, H. Y.; Kim, M. S.; Lee, D.-Y.; Kim, J. S.; Eom, G.-S.; Leem, J.-Y. // Acta Physica Polonica, A.;Jun2010, Vol. 117 Issue 6, p941 

    Multi-stacked InAs QDs embedded in ten periods of GaAs/In0:1Ga0:9As strained layers were grown by MBE and their optical properties were investigated by using PL spectroscopy. For the QDs embedded in ten periods of GaAs/In0:1Ga0:9As strained layers, the PL intensity is enhanced about 4.7 times...

  • Electron emission from multilayer ensembles of vertically coupled InAs quantum dots in an n-GaAs matrix. Gutkin, A. A.; Brunkov, P. N.; Egorov, A. Yu.; Zhukov, A. E.; Konnikov, S. G. // Semiconductors;Sep2008, Vol. 42 Issue 9, p1104 

    Electron emission from multilayer arrays of vertically coupled InAs quantum dots into the n-GaAs matrix in Schottky-barrier structures (electron concentration n ≈ 2 × 1016 cm−3) is studied by admittance spectroscopy. It is established that, in the temperature region below...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics