Polymer field-effect transistors by a drawing method

Shuichi Nagamatsu.; Wararum Takashina; Kaneto, Keiichi; Yoshida, Yuji; Tanigaki, Nobutaka; Yase, Kiyoshi
June 2004
Applied Physics Letters;6/7/2004, Vol. 84 Issue 23, p4608
Academic Journal
We demonstrated the polymer field-effect transistors (FETs) utilizing regioregular poly(3-alkylthiophene)s (P3AT) films prepared by a drawing method. The P3AT film exhibited large optical dichroic ratio, which originated in the polymer backbones aligned to the drawing direction. In-plane anisotropy and enhancement of FET characteristics have been observed that are caused by molecular alignment. In the case of poly(3-dodecylthiophene), the hole mobility along the drawing direction was enhanced by a factor of 25 compared with that of spin-coated film. © 2004 American Institute of Physics.


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