Electromechanical coupling coefficient for surface acoustic waves in single-crystal bulk aluminum nitride

Bu, G.; Ciplys, D.; Shur, M.; Schowalter, L. J.; Schujman, S.; Gaska, R.
June 2004
Applied Physics Letters;6/7/2004, Vol. 84 Issue 23, p4611
Academic Journal
The electromechanical coupling coefficient K2 for surface acoustic waves propagating on c and a surfaces of bulk AlN single crystals has been measured using the S11-parameter method in the frequency range of 160–360 MHz. The extracted values of K2 are 0.11% and 0.47% for the c and a surfaces, respectively. By fitting our experimental data to our numerical simulation results, we have estimated piezoelectric constants, which are in a reasonable agreement with literature data. Our results are consistent with the negative sign of the e15 constant. © 2004 American Institute of Physics.


Related Articles

  • Propagation of a shear-horizontal surface acoustic mode in a periodically grooved AlN/Al2O3 microstructure. Xu, J.; Thakur, J.S.; Zhong, F.; Ying, H.; Auner, G.W. // Journal of Applied Physics;7/1/2004, Vol. 96 Issue 1, p212 

    We investigate the shear-horizontal surface acoustic waves (SH-SAWs) generated on an AlN/Al2O3 microstructure by laser-micromachined grooves on the AlN film. In the absence of grooves, the AlN/Al2O3 device shows resonance for only a lower velocity SAW mode. However, when grooves of periodicity...

  • Aluminum nitride films synthesized by dual ion beam sputtering. Sheng Han; Hong-Ying Chen; Chih-Hsuan Cheng; Jian-Hong Lin; Shih, Han C. // Journal of Materials Research;Dec2004, Vol. 19 Issue 12, p3521 

    Aluminum nitride films were deposited by varying the voltages of argon ion beams from 400 to 1200 V in dual ion beam sputtering. The crystal structure, microstructure, and elemental distributions of the aluminum nitride films were analyzed by x-ray diffraction, field emission scanning electron...

  • Computer Simulation of the Kinetics of Eutectic Crystallization1. Vol'nov, I. N. // Metal Science & Heat Treatment;Jan/Feb2004, Vol. 46 Issue 1/2, p61 

    The state-of-the-art in the phenomenological theory of eutectic crystallization is considered. The theory is used for developing a method for computer simulation of the kinetics of crystallization of castings from eutectic alloys. The kinetic aspect of the process is considered in terms of the...

  • Contributions to in-plane piezoresponse on axially symmetrical samples. Peter, F.; Rüdiger, A.; Waser, R.; Szot, K.; Reichenberg, B. // Review of Scientific Instruments;Oct2005, Vol. 76 Issue 10, p106108 

    We report on the influence of system-immanent asymmetries on the interpretation of in-plane piezoresponse force microscopy (PFM). As PFM is a surface scanning method, the electromechanical interaction of probe tip and sample is a key aspect of all experiments. An initial characterization of...

  • Growth of aluminum nitride on (111) silicon: Microstructure and interface structure. Bourret, A.; Barski, A.; Rouviere, J. L.; Renaud, G.; Barbier, A. // Journal of Applied Physics;2/15/1998, Vol. 83 Issue 4, p2003 

    Presents an experimental study on the growth of hexagonal aluminum nitride. Indepth look at how the experiment was conducted; Conclusions of the experiment.

  • Optical behavior near the fundamental absorption edge of sputter-deposited microcrystalline aluminum nitride. Aita, C. R.; Kubiak, C. J. G.; Shih, F. Y. H. // Journal of Applied Physics;11/1/1989, Vol. 66 Issue 9, p4360 

    Studies the optical behavior near the fundamental adsorption edge of sputter-deposited microcrystalline aluminum nitride. Room-temperature equilibrium phases in the bulk aluminum-nitrogen system; Details on the experimental procedure; Discussion on the results of the study.

  • Microstructure and strength of AlN-SiC interface studied by synchrotron X-rays. Argunova, T.; Gutkin, M.; Shcherbachev, K.; Je, J.; Lim, J.; Kazarova, O.; Mokhov, E. // Journal of Materials Science;Apr2017, Vol. 52 Issue 8, p4244 

    Bulk AlN crystals grown by sublimation on SiC substrates exhibit relatively high dislocation densities. The kind of defect formation at early growth stages influences the structural quality of the grown crystals. In this work, the dislocation distribution near to the interface is understood...

  • Optical phonon decay in bulk aluminum nitride. Song, D. Y.; Holtz, M.; Chandolu, A.; Nikishin, S. A.; Mokhov, E. N.; Makarov, Yu.; Helava, H. // Applied Physics Letters;7/10/2006, Vol. 89 Issue 2, p021901 

    We report Raman studies of the E22 and A1(LO) symmetry phonons of bulk AlN from 13 to 375 K. Based on observed dependences of the phonon energies and linewidths, and accounting for the temperature-dependent thermal expansion, we determine that both phonon lifetimes are limited by two-phonon...

  • Reduction of Micrometer Size Al Particles in Nanosize AlN Powder Synthesized by Pulsed Wire Discharge. Cho, Chuhyun; Kinemuchi, Yoshiaki; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi // AIP Conference Proceedings;2002, Vol. 651 Issue 1, p333 

    Experimental studies were carried out on the synthesis of nanosize powders of aluminum nitride (AlN) by pulsed wire discharge (PWD). Efforts were made to produce high purity AlN powder by reducing the number of micrometer-size particles. The deposited energy in the wire before the explosion is...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics