Optically switched conductivity of epitaxial diamond on nitrogen doped diamond substrates

Geis, M. W.; Krohn, K. E.; Lawless Jr., J. M.; Deneault, S. J.; Marchant, M. F.; Twichell, J. C.; Lyszczarc, T. M.; Butler, J. E.; Flechtner, D. D.; Wright, R.
June 2004
Applied Physics Letters;6/7/2004, Vol. 84 Issue 23, p4620
Academic Journal
Epitaxial diamond with remarkably low p-type doping (1×1014–1×1017 cm-3) and exceptionally low compensation ∼1×1013 cm-3, has enabled the demonstration of a optically-switched conduction modulation of the epitaxial layer. Charge exchange between the diamond substrate and the epitaxial layer makes it possible to modulate the conductivity of the epitaxial layer. Incandescent light will make the lightly p-doped epitaxial layer insulating and ultraviolet radiation will make the layer conductive again. Once the layer conductivity has been established it will remain in the same electrical state for days, if kept in the dark. © 2004 American Institute of Physics.


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