Silicon nanopillars for mechanical single-electron transport

Scheible, Dominik V.; Blick, Robert H.
June 2004
Applied Physics Letters;6/7/2004, Vol. 84 Issue 23, p4632
Academic Journal
Nanomechanical systems have been shown to accurately regulate the flow of electric current. We present the concept and demonstrate experimental operation of a vertical electromechanical single-electron transistor. The device is fabricated from silicon forming a nanopillar situated between source and drain contacts. The advantage of this concept is its straightforward manufacturing, which only includes two processing steps: Electron-beam lithography and reactive ion etching. The device operates at room temperature and at frequencies in the range of 350–400 MHz. A theoretical model of the operation of this device is given, explaining qualitatively the obtained experimental data. © 2004 American Institute of Physics.


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