TITLE

Silicon nanopillars for mechanical single-electron transport

AUTHOR(S)
Scheible, Dominik V.; Blick, Robert H.
PUB. DATE
June 2004
SOURCE
Applied Physics Letters;6/7/2004, Vol. 84 Issue 23, p4632
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Nanomechanical systems have been shown to accurately regulate the flow of electric current. We present the concept and demonstrate experimental operation of a vertical electromechanical single-electron transistor. The device is fabricated from silicon forming a nanopillar situated between source and drain contacts. The advantage of this concept is its straightforward manufacturing, which only includes two processing steps: Electron-beam lithography and reactive ion etching. The device operates at room temperature and at frequencies in the range of 350–400 MHz. A theoretical model of the operation of this device is given, explaining qualitatively the obtained experimental data. © 2004 American Institute of Physics.
ACCESSION #
13203742

 

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