Quantitative microwave evanescent microscopy of dielectric thin films using a recursive image charge approach

Chen Gao; Bo Hu; Pu Zhang; Mengming Huang; Wenhan Liu; Takeuchi, I.
June 2004
Applied Physics Letters;6/7/2004, Vol. 84 Issue 23, p4647
Academic Journal
A recursive image charge approach has been successfully developed for quantitative microwave microscopy of dielectric thin films using the scanning evanescent microwave microscope. With this approach and the recursion-to-circulation algorithm, frequency shift of the microscope as functions of the thickness of the film, dielectric constants of the film and the substrate can be efficiently computed in a circulation way. © 2004 American Institute of Physics.


Related Articles

  • A new furnace for thin-film stress experiments. von Preissig, F. J. // Review of Scientific Instruments;Apr92, Vol. 63 Issue 4, p2305 

    A specialized furnace that is compatible with the optical-lever method of thin-film stress measurement has been developed. Its design is geared toward experiments in which changes in stress at constant temperature are to be monitored. Important capabilities include a maximum temperature of over...

  • Direct structural evidences of Mn11Ge8 and Mn5Ge2 clusters in Ge0.96Mn0.04 thin films. Yong Wang; Jin Zou; Zuoming Zhao; Xinhai Han; Xiaoyu Zhou; Wang, Kang L. // Applied Physics Letters;3/10/2008, Vol. 92 Issue 10, p101913 

    Mn-rich clusters in Mn-doped Ge thin films epitaxially grown on Ge (001) have been investigated by various transmission electron microscopy techniques. Both the mysterious Mn11Ge8 and the hexagonal Mn5Ge2 (a=0.72 nm and c=1.3 nm) clusters were confirmed to coexist in the thicker Ge0.96Mn0.04...

  • An improved electron transmission method for measuring electron trapping cross sections at the surface of dielectric films Nagesha, K.; Gamache, J.; Bass, A.D.; Sanche, L. // Review of Scientific Instruments;Oct97, Vol. 68 Issue 10, p3883 

    Investigates several problems inherent in the low energy electron transmission technique for measuring cross sections for charge trapping, by submonolayer quantities of a target molecule deposited onto the surface of a dielectric film. Energy of the incident electron beam while charging the...

  • Shock loadings on thin film manganin gauges packaged by vapor-deposited alumina. Du, X. S.; Yang, B. C.; Zhou, H. R. // Review of Scientific Instruments;Apr2002, Vol. 73 Issue 4, p1967 

    To extend the measurement range to 100 GPa, a modified manganin gauge was prepared and examined. The modifications were focused on the package materials and technique. The manganin sensing elements were first deposited by magnetron sputtering on Al[sub 2]O[sub 3] substrates, and then covered by...

  • Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP. Xinhong Cheng; Dapeng Xu; Qing-Qing Sun; Dawei He; Zhongjian Wang; Yuehui Yu; David Wei Zhang; Qingtai Zhao // Applied Physics Letters;1/11/2010, Vol. 96 Issue 2, p022904 

    Al2O3/NbAlO/Al2O3 sandwich dielectric films were grown on InP substrate and annealed. X-ray reflectivity measurements suggested that 1.0 nm interfacial layer existed at InP interface, x-ray diffraction and high resolution transmission electron microscopy indicated the films were crystallized....

  • Epitaxial growth of dielectric Ba[sub 0.6]Sr[sub 0.4]TiO[sub 3] thin film on MgO for room temperature microwave phase shifters. Chen, C. L.; Shen, J.; Chen, S. Y.; Luo, G. P.; Chu, C. W.; Miranda, F. A.; Van Keuls, F. W.; Jiang, J. C.; Meletis, E. I.; Chang, H. Y. // Applied Physics Letters;1/29/2001, Vol. 78 Issue 5, p652 

    Dielectric Ba[sub 0.6]Sr[sub 0.4]TiO[sub 3] thin films were epitaxially grown on (001) MgO by using pulsed laser ablation. Microstructure studies from x-ray diffraction and electron microscopy suggest that the as-grown films are c-axis oriented with an interface relationship of...

  • Properties of reactively radio frequency-magnetron sputtered ( Zr,Sn )TiO4 dielectric films. Cheng-Liang Huang; Cheng-Hsing Hsu // Journal of Applied Physics;7/15/2004, Vol. 96 Issue 2, p1186 

    Zirconium tin titanium oxide doped 1 wt % ZnO thin films on n-type Si substrate were deposited by rf magnetron sputtering at a fixed rf power of 350 W with various argon-oxygen (Ar/O2) mixture and different substrate temperatures. Electrical properties and microstructures of ZnO-doped...

  • Effects of active atomic sinks and reservoirs on the reliability of Cu/low-k interconnects. Wei, Frank L.; Hau-Riege, Christine S.; Marathe, Amit P.; Thompson, Carl V. // Journal of Applied Physics;Apr2008, Vol. 103 Issue 8, p084513 

    Electromigration experiments using Cu/low-k interconnect tree structures were carried out in order to study the effects of active atomic sinks and reservoirs on interconnect reliability. In all cases, failures occurred after a long period of void growth. Kinetic parameters were extracted from...

  • Magnetodielectric effect in double perovskite La2CoMnO6 thin films. Singh, M. P.; Truong, K. D.; Fournier, P. // Applied Physics Letters;7/23/2007, Vol. 91 Issue 4, p042504 

    We report on the magnetodielectric properties of well-ordered epitaxial La2CoMnO6 films. The temperature dependence of the dielectric constant is measured in the 10–105 Hz frequency range under applied magnetic fields up to 50 kOe. As temperature is lowered, the dielectric constant...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics