TITLE

NbO as gate electrode for n-channel metal-oxide-semiconductor field-effect-transistors

AUTHOR(S)
Gao, W.; Conley Jr., J. F.; Ono, Y.
PUB. DATE
June 2004
SOURCE
Applied Physics Letters;6/7/2004, Vol. 84 Issue 23, p4666
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Niobium mono-oxide (NbO) is investigated as a potential candidate for gate electrode to replace poly-silicon gate in metal-oxide-semiconductor field-effect transistors. NbO was found to have a work function of 4.18±0.05 eV on SiO2 and to be stable up to 1000 °C with SiO2 and HfO2 gate dielectrics. The low work function and high stability make NbO suitable for n-channel metal-oxide-semiconductor field-effect transistors devices. The method of deposition is critical during the fabrication to minimize the incorporation of Nb, NbO2, and Nb2O5 which are detrimental to the stability and conductivity of the gate electrode and extra care is needed to avoid further oxidation of NbO. © 2004 American Institute of Physics.
ACCESSION #
13203730

 

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