TITLE

Strain relaxation in AlN/GaN bilayer films grown on γ-LiAlO2(100) for nanoelectromechanical systems

AUTHOR(S)
Takagaki, Y.; Sun, J.; Brandt, O.; Ploog, K. H.
PUB. DATE
June 2004
SOURCE
Applied Physics Letters;6/7/2004, Vol. 84 Issue 23, p4756
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We fabricate submicrometer-wide cantilevers and beams from M-plane AlN/GaN bilayer films grown on γ-LiAlO2(100) substrates. The chemically reactive substrate is ideal for fabrication of nanoelectromechanical systems using the light, stiff, and piezoelectrically active AlN. The absence of polarization fields in M-plane quantum wells allows us to incorporate optical functionalities in the (Al,Ga)N-based nanoelectromechanical systems. Self-rolling of the cantilevers indicates that the bilayer films are strained at the AlN–GaN interface along the a axis, whereas the strain is roughly completely relaxed along the c axis. We examine the partial relaxation of the strain along the a axis when the layer thickness is varied. © 2004 American Institute of Physics.
ACCESSION #
13203700

 

Related Articles

  • Backscattering of light by a finite two-dimensional crystal plate in the region of exciton resonance: Antispecular reflection. Kozlov, G. G. // Optics & Spectroscopy;Jul2006, Vol. 101 Issue 1, p151 

    It is shown that scattering of a plane monochromatic wave by a finite two-dimensional crystal (quantum well or Langmuir-Blodgett film) in the region of exciton resonance shows, along with the peak of specular reflection, a peak of comparable magnitude corresponding to backward scattering...

  • Tuning of structure inversion asymmetry by the δ-doping position in (001)-grown GaAs quantum wells. Lechner, V.; Golub, L. E.; Olbrich, P.; Stachel, S.; Schuh, D.; Wegscheider, W.; Bel'kov, V. V.; Ganichev, S. D. // Applied Physics Letters;6/15/2009, Vol. 94 Issue 24, p242109 

    Both structure and bulk inversion asymmetry in modulation-doped (001)-grown GaAs quantum wells were investigated employing the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be accurately tailored by the delta-doping layer position....

  • Singlet And Triplet Trion States In QW Structures. Andronikov, D.; Kochereshko, V.; Platonov, A.; Crooker, S. A.; Barrick, T.; Karczewski, G. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p973 

    Photoluminescence (PL) spectra of modulation-doped CdTe/CdMgTe quantum well structures containing two dimensional electron gases different electron concentrations have been studied in magnetic fields up to 45T. Recombination line of triplet trion state was found in the spectra. A model...

  • Intersubband Tunneling without Intrasubband Relaxation in Multi-quantum Wells. Vieira, G. S.; Villas-Boôas, J. M.; Guimarães, P. S. S.; Studart, N.; Kono, J.; Allen, S. J.; Campman, K. L.; Gossard, A. C. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1143 

    We present evidence of a new photon-assisted tunneling channel in multi-quantum wells in the presence of a magnetic field applied parallel to the quantum well layers. Electrons in one potential well that are photo-excited to anti-crossings of the dispersion curves of the conduction subbands...

  • Signature of Singlet-Triplet Crossing in PL in GaAs QW’s. Bryja, L.; Wójs, A.; Jadczak, J.; Misiewicz, J.; Płochocka, P.; Maude, D.; Potemski, M.; Reuter, D.; Wieck, A. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p247 

    Positively charged excitons in a two-dimensional hole gas in symmetric and asymmetric GaAs/Ga1-xAlxAs quantum wells are studied in polarization-resolved photoluminescence experiments in high magnetic fields B (up to 23 T) and low temperatures (down to 300 mK). The experiments are accompanied by...

  • Excitons and Trions in Heavily Doped QWs at High Magnetic Fields. Kochereshko, V.; Andronikov, D.; Karczewski, G.; Crooker, S. A. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p983 

    Modification of photoluminescence spectra taken from modulation doped CdTe/CdMgTe QW structures have been studied in magnetic fields up to 45T at high concentrations of 2D electrons. The following peculiarities were found in relatively low magnetic fields when filling factors v was higher than...

  • Excitonic oscillator strengths in quantum wells containing a 2-D electron gas. Cox, R. T.; Kheng, K.; Miller, R. B.; Huard, V.; Bourgognon, C.; Saminadayar, K.; Tatarenko, S. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1164 

    Optical absorption spectra of modulation doped CdTe quantum wells with electron concentration ne up to ≈ 0.1/πaB2 (where aB= excitonic Bohr radius) are interpreted in terms of few-body excitations : exciton, trion and quatron processes. The initial excitonic oscillator strength of the...

  • Intra-impurity transitions in uniformly Iodine doped MBE CdTe/CdMgTe quantum well—with no energetic scaling. Szot, M.; Karpierz, K.; Kossut, J.; Grynberg, M. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1129 

    Measurements of photoconductivity spectra for fixed transition energy between splitted by an external magnetic field levels of shallow donors, in the case of uniformly doped CdTe/Cd0.8Mg0.2Te quantum well structure, exhibit unexpected lack of sensitivity on photon energy causing the intra...

  • Optical coherent transient effects in magnetoactive GaAs/AlGaAs quantum well structure. Kapoor, S.; Kumar, J.; Sen, P. K. // Journal of Applied Physics;5/1/2004, Vol. 95 Issue 9, p4833 

    The effect of an external magnetic field on optical coherent transient phenomena has been analyzed for semiconductor quantum well structures (QWS). The Lüttinger Hamiltonian is used to incorporate the complex valence band structure which is modified due to the application of the magnetic...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics