Strain relaxation in AlN/GaN bilayer films grown on γ-LiAlO2(100) for nanoelectromechanical systems

Takagaki, Y.; Sun, J.; Brandt, O.; Ploog, K. H.
June 2004
Applied Physics Letters;6/7/2004, Vol. 84 Issue 23, p4756
Academic Journal
We fabricate submicrometer-wide cantilevers and beams from M-plane AlN/GaN bilayer films grown on γ-LiAlO2(100) substrates. The chemically reactive substrate is ideal for fabrication of nanoelectromechanical systems using the light, stiff, and piezoelectrically active AlN. The absence of polarization fields in M-plane quantum wells allows us to incorporate optical functionalities in the (Al,Ga)N-based nanoelectromechanical systems. Self-rolling of the cantilevers indicates that the bilayer films are strained at the AlN–GaN interface along the a axis, whereas the strain is roughly completely relaxed along the c axis. We examine the partial relaxation of the strain along the a axis when the layer thickness is varied. © 2004 American Institute of Physics.


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