TITLE

High-efficiency 269 nm emission deep ultraviolet light-emitting diodes

AUTHOR(S)
Adivarahan, V.; Wu, S.; Zhang, J. P.; Chitnis, A.; Shatalov, M.; Mandavilli, V.; Gaska, R.; Khan, M. Asif.
PUB. DATE
June 2004
SOURCE
Applied Physics Letters;6/7/2004, Vol. 84 Issue 23, p4762
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on 269 nm emission deep ultraviolet light-emitting diodes (LEDs) over sapphire. The material quality, device design, and contact processing sequence yielded devices with external quantum efficiencies as high as 0.4% for a pumped pulse current of 200 mA and 0.32% for a dc pump current of 10 mA. For a module of two LEDs connected in series, a record continuous-wave power of 0.85 mW (at 40 mA) and a wall plug efficiency of 0.16% (at 10 mA dc) were measured. © 2004 American Institute of Physics.
ACCESSION #
13203698

 

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