Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy

Ivanov, S. V.; Lyublinskaya, O. G.; Vasilyev, Yu B.; Kaygorodov, V. A.; Soroki, S. V.; Sedova, I. V.; Solov'ev, V. A.; Meltser, B. Ya.; Sitnikova, A. A.; L'vova, T. V.; Berkovits, V. L.; Toropov, A. A.; Kop'ev, P. S.
June 2004
Applied Physics Letters;6/7/2004, Vol. 84 Issue 23, p4777
Academic Journal
Asymmetric (6.7–300)-nm-thick InAs quantum wells (QWs) confined between AlAsSb and CdMgSe barriers have been fabricated by molecular-beam epitaxy. A special procedure of the CdMgSe-on-InAs growth initiation, exploiting an ex situ S passivation of InAs and in situ deposition of an ultrathin ZnTe buffer layer, results in the fabrication of high quality structures with a density of extended defects below 106 cm2. QW photoluminescence studies demonstrate a confinement effect and confirm the type I band alignment at the heterovalent InAs/CdMgSe interface mediated by the ZnTe interlayer. Observation of Shubnikov de Haas oscillations of magnetoresistance for an asymmetric 19-nm-thick InAs QW indicates an existence of the two-dimensional electron gas with the low-temperature sheet electron density of 1.3×1012 cm-2 and the mobility as high as ∼10 000 cm2/V s. © 2004 American Institute of Physics.


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