Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor

Feng, M.; Holonyak Jr., N.; Chu-Kung, B.; Walter, G.; Chan, R.
June 2004
Applied Physics Letters;6/7/2004, Vol. 84 Issue 23, p4792
Academic Journal
We report radiative recombination in the base layer of Type-II InP/GaAsSb/InP double heterojunction bipolar light-emitting transistors (HBLET) operating in the common-emitter configuration. The typical current gain, β, for a 120×120 μm2 emitter area of the HBLET is 38. The optical emission wavelength from a 30 nm GaAs0.51Sb0.49 base is centered at λpeak=1600 nm. Three-port operation of the Type-II HBLET with simultaneously an amplified electrical output and an optical output with signal modulation is demonstrated at 10 kHz. © 2004 American Institute of Physics.


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