TITLE

Neurons culturing and biophotonic sensing using porous silicon

AUTHOR(S)
de Leon, S. Ben-Tabou; Sa'ar, A.; Oren, R.; Spira, M. E.; Yitzchaik, S.
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/31/2004, Vol. 84 Issue 22, p4361
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on culturing of Aplysia neurons on porous silicon substrates. Good adhesion of the neurons to the porous silicon substrate and a formation of neuron-semiconductor contact have been accomplished. Cultured neurons survived for at least one week on porous silicon showing normal passive membrane properties and generation of action potentials. We have investigated the possibility of using the photoluminescence from porous silicon for transducing neuronal activity into photonic signals. We found that photoluminescence quenching occurs for cathodic current polarization using aqueous salt-based liquid solution contact. The quenching process is due to diffusion of electrons into the porous silicon, giving rise to Auger nonradiative recombination in the silicon nanocrystallites. The decay time of the photoluminescence was found to be relatively slow due to diffusive nature of the process. © 2004 American Institute of Physics.
ACCESSION #
13154729

 

Related Articles

  • Opposite effects of NO2 on electrical injection in porous silicon gas sensors. Gaburro, Zeno; Oton, Claudio J.; Pavesi, Lorenzo; Pancheri, Lucio // Applied Physics Letters;5/31/2004, Vol. 84 Issue 22, p4388 

    The electrical conductance of porous silicon fabricated with heavily doped p-type silicon is very sensitive to NO2. We show that the sign of the injection variations depends on the porous layer thickness. If the thickness is sufficiently low—of the order of few μm—the injection...

  • Transport properties of thermally oxidized porous silicon. Grigor’ev, L. V.; Grigor’ev, I. M.; Zamoryanskaya, M. V.; Sokolov, V. I.; Sorokin, L. M. // Technical Physics Letters;Sep2006, Vol. 32 Issue 9, p750 

    The process of current transfer in thermally oxidized porous silicon has been studied. A model based on the combination of hopping and tunneling mechanisms of charge transport is proposed. The concentration of charge traps and the mobility of charge carriers are evaluated using the...

  • Bragg surface wave device based on porous silicon and its application for sensing. Guillermain, E.; Lysenko, V.; Orobtchouk, R.; Benyattou, T.; Roux, S.; Pillonnet, A.; Perriat, P. // Applied Physics Letters;6/11/2007, Vol. 90 Issue 24, p241116 

    Results concerning a Bragg surface wave device based on porous silicon and intended for sensing application are reported. Existence of optical surface waves on Bragg structures is experimentally shown. Such device is expected to be very sensitive to the grafting of biological molecules. The...

  • Nanoindentation investigation of the Young’s modulus of porous silicon. Bellet, D.; Lamagnère, P.; Vincent, A.; Bréchet, Y. // Journal of Applied Physics;10/1/1996, Vol. 80 Issue 7, p3772 

    Deals with a study which measured the Young's modulus of porous silicon samples using the nanoindentation technique. Discussion on the formation of porous silicon; Methodology of the study; Results and discussion.

  • Metal-assisted chemical etching in HF/H[sub 2]O[sub 2] produces porous silicon. Li, X.; Bohn, P. W.; Bohn, P.W. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    A simple and effective method is presented for producing light-emitting porous silicon (PSi). A thin (d<10 nm) layer of Au, Pt, or Au/Pd is deposited on the (100) Si surface prior to immersion in a solution of HF and H[sub 2]O[sub 2]. Depending on the type of metal deposited and Si doping type...

  • Nondestructive Diagnostics of Microchannel (Macroporous) Silicon by X-ray Topography. Astrova, E. V.; Remenyuk, A. D.; Tkachenko, A. G.; Shul�pina, I. L. // Technical Physics Letters;Dec2000, Vol. 26 Issue 12, p1087 

    It is demonstrated that X-ray topography can be used for imaging the boundary between a microchannel silicon layer and a substrate, evaluating the quality of this interface, determining the channel depth, and revealing mechanical stresses. This technique can be used for nondestructive monitoring...

  • Spatial distribution of oxygen in luminescent porous silicon films. Teschke, Omar // Applied Physics Letters;4/11/1994, Vol. 64 Issue 15, p1986 

    Characterizes light-emitting porous silicon films produced by anodization. Use of transmission electron microscopy and electron energy loss spectroscopy imaging; Degree of oxygen distribution throughout the sample; Composition of the porous silicon films formed on lightly doped oriented silicon.

  • Porous silicon membranes. Searson, P.C. // Applied Physics Letters;8/12/1991, Vol. 59 Issue 7, p832 

    Analyzes the porous silicon membranes by electrochemical etching through wafers of up to 500 micrometer in thickness. Formation of porous silicon layers; Dependence of the pore diameter on dopant concentration for a given etching condition; Application of self-supporting porous silicon membranes.

  • A Mechanism of Oxygen-Induced Passivation of Porous Silicon in the HF : HCl : C[sub 2]H[sub 5]OH Solutions. Gavrilov, S. A.; Belogorokhov, A. I.; Belogorokhova, L. I. // Semiconductors;Jan2002, Vol. 36 Issue 1, p98 

    The problem of stabilizing the properties of porous silicon films was studied. A thermodynamical analysis of electrochemical processes occurring in the course of anodic Si dissolution is performed. A new description of electrode reaction of silicon interaction with hydrofluoric acid is...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics