Correlated stacks of CdSe/ZnSSe quantum dots

Schmidt, Th.; Clausen, T.; Falta, J.; Alexe, G.; Passow, T.; Hommel, D.; Bernstorff, S.
May 2004
Applied Physics Letters;5/31/2004, Vol. 84 Issue 22, p4367
Academic Journal
The observation and quantitative investigation of the spatial correlation of CdSe quantum dots in stacked CdSe/ZnSSe quantum-dot layers is reported. Using grazing incidence x-ray small angle scattering, the influence of the ZnSSe spacer layer thickness ranging from 20 to 80 Å, as well as the influence of the stacking number (3–10) has been analyzed. Satellite spots, indicative of quantum-dot ordering, have been observed for a spacer thickness of up to 45 Å, and for a stacking number of at least 5. This finding can be explained by a self-organized ordering process driven by the lattice mismatch induced strain. A mean lateral quantum-dot distance ranging from 116 to 145 Å, depending on the spacer thickness, has been found. In addition, an anisotropy of twofold symmetry has been observed, with the strongest correlation signal along <110>. © 2004 American Institute of Physics.


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