TITLE

GaInN light-emitting diodes with RuO2/SiO2/Ag omni-directional reflector

AUTHOR(S)
Jong Kyu Kim; Gessmann, Thomas; Hong Luo; Schubert, E. Fred
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/31/2004, Vol. 84 Issue 22, p4508
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A GaInN light-emitting diode (LED) employing an omni-directional reflector (ODR) is presented. The ODR consists of a RuO2 ohmic contact to p-type GaN, a quarter-wave thick SiO2 low-index layer perforated by an array of micro-contacts, and an Ag layer. Calculations predict a 98% angle-averaged reflectivity at λ=450 nm for an GaN/SiO2/Ag ODR, much higher than that for a 20 period Al0.25Ga0.75N/GaN distributed Bragg reflector (49%) and an Ag reflector (94%). It is shown that the RuO2/SiO2/Ag ODR has higher reflectivity than Ni/Au and even Ag reflectors, leading to a higher light extraction efficiency of GaInN LEDs with ODR. The electrical properties of the ODR-LED are comparable to those LEDs with a conventional Ni/Au contact. © 2004 American Institute of Physics.
ACCESSION #
13154680

 

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