Microstructures formed in recrystallized Si

Watanabe, K.; Anzai, Y.; Nakanishi, N.; Yamazaki, T.; Kuramochi, K.; Mitsuishi, K.; Furuya, K.; Hashimoto, I.
May 2004
Applied Physics Letters;5/31/2004, Vol. 84 Issue 22, p4520
Academic Journal
Our study using systematic transmission electron microscopy observation and simulation shows that microstructures formed in recrystallized Si are characterized as microtwin or lamellar microtwin. Detailed analysis leads to their atomic structures. The discovery of exceptional diffraction spots offers direct evidence of long-periodic-order structures and antiphase boundaries, due to the ordering of projected lamellar microtwins. © 2004 American Institute of Physics.


Related Articles

  • FIB and TEM studies of interface structure in diamond–SiC composites. Park, Joon; Sinclair, Robert; Rowcliffe, David; Stern, Margaret; Davidson, Howard // Journal of Materials Science;Jul2006, Vol. 41 Issue 14, p4611 

    The microstructure of diamond-SiC interfaces was studied by transmission electron microscopy (TEM). Specimens were prepared by focused ion beam (FIB) etching from a diamond-SiC composite bulk material. The diamond-SiC interfaces were easily located by high contrast in FIB images of the bulk...

  • Atomic structures at a Si–nitride/Si(001) interface. Ikarashi, Nobuyuki; Watanabe, Koji; Miyamoto, Yoshiyuki // Journal of Applied Physics;9/15/2001, Vol. 90 Issue 6 

    We used high-resolution transmission electron microscopy to show that the atomic structures at a Si[sub 3]N[sub 4]/Si interface are clearly different from those at a SiO[sub 2]/Si interface. Using first-principles calculations, we also found that, in one of the observed N-induced interfacial...

  • Magnetic properties and atomic structure of La2/3Ca1/3MnO3–YBa2Cu3O7 heterointerfaces. Zhang, Z. L.; Kaiser, U.; Soltan, S.; Habermeier, H.-U.; Keimer, B. // Applied Physics Letters;12/14/2009, Vol. 95 Issue 24, p242505 

    A heterostructure comprised of a 2.7 nm (7 unit cell) thick layer of the metallic ferromagnet La2/3Ca1/3MnO3 and two 50 nm thick layers of the high-temperature superconductor YBa2Cu3O7 epitaxially grown on (100) SrTiO3 by pulsed-laser deposition was characterized by magnetization measurements...

  • Atomistic study on twinning of Cu2O quantum dots. Luying Li; Jianbo Wang; Renhui Wang; Huijun Liu; Chunlin Jia; Lili Ma; Ying Yu // Applied Physics Letters;9/11/2006, Vol. 89 Issue 11, p113109 

    Cu2O nanoparticles are investigated at atomic scale by high-resolution transmission electron microscopy. It is found that growth {111} twinning is the most common type of defects in these nanoparticles. The atomic structure of the twinning boundaries is determined referring to the detailed image...

  • Transmission electron microscopy studies of crystal-to-amorphous transition in ion implanted... Ishimaru, Manabu; Harada, Shinsuke // Journal of Applied Physics;2/1/1997, Vol. 81 Issue 3, p1126 

    Studies the microstructure of ion implanted silicon at room temperature using cross-sectional transmission electron microscopy. Presence of buried amorphous layers; Characterization of damaged layers adjacent to the amorphous layers; Atomic structure of the damaged regions.

  • Study of the microstructure of low energy (70 keV) oxygen implanted silicon. Li, Y.; Kilner, J.A.; Hemment, P.L.F.; Robinson, A.K.; Zhang, J.P.; Reeson, K.J.; Marsh, C.D.; Booker, G.R. // Applied Physics Letters;12/9/1991, Vol. 59 Issue 24, p3130 

    Investigates the microstructure of silicon implanted with low energy oxygen. Use of ion channeling and transmission electron microscopy; Importance of damage distribution in deciding the final microstructure; Determination of the threading dislocation density in the overlayer.

  • Interfacial structure of epitaxial MgB[sub 2] thin films grown on (0001) sapphire. Tian, W.; Pan, X. Q.; Bu, S. D.; Kim, D. M.; Choi, J. H.; Patnaik, S.; Eom, C. B. // Applied Physics Letters;7/22/2002, Vol. 81 Issue 4, p685 

    The microstructure and interfacial atomic structure of MgB[sub 2] thin films fabricated on the (0001) Al[sub 2]O[sub 3] substrate were characterized by transmission electron microscopy. It was found that the MgB[sub 2] films grow epitaxially on the substrate with an orientation relationship with...

  • Growth of Bi2O3 rods using a trimethylbismuth and oxygen mixture. Kim, H. W.; Myung, J. H.; Shim, S. H.; Lee, C. // Applied Physics A: Materials Science & Processing;Jul2006, Vol. 84 Issue 1/2, p187 

    We have successfully grown the rod-like structures of bismuth oxide (Bi2O3) on silicon substrate by a reaction of a trimethylbismuth (TMBi) and oxygen (O2) mixture without using any catalyst. We have characterized the samples by means of X-ray diffraction, scanning electron microscopy, and...

  • Crystallography and Morphology of Carbides in a Low-Cycle Fatigued 1Cr-1Mo-0.25V Steel. Lee, Tae-Ho; Oh, Chang-Seok; Ryu, Seog-Hyeon; Kim, Jeong-Tae // Metallurgical & Materials Transactions. Part A;Jan2011, Vol. 42 Issue 1, p147 

    The carbide precipitation in 1Cr-1Mo-0.25V steel subjected to low-cycle fatigue (LCF) deformation at room and elevated temperatures was investigated by means of transmission electron microscopy. Based on the electron diffraction analyses, three types of carbides, MC-type cementite, MC, and MC,...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics