Probing local coordination environments in high-k materials for gate stack applications

McComb, D. W.; Craven, A. J.; Hamilton, D. A.; M. MacKenzie
May 2004
Applied Physics Letters;5/31/2004, Vol. 84 Issue 22, p4523
Academic Journal
Using electron energy-loss spectroscopy, the oxygen K-edge excitation in a range of crystalline standards relevant to candidate high-k materials has been examined. The spectra have been modeled using electronic structure calculations in order to understand the influence of the local coordination environment on the data. The knowledge obtained is used to probe the local atomic structure in thin amorphous films of “HfSiO.” © 2004 American Institute of Physics.


Related Articles

  • Electron energy-loss spectroscopy analysis of HfO2 dielectric films on strained and relaxed SiGe/Si substrates. Jiyoung Jang; Tae Joo Park; Ji-Hwan Kwon; Jae Hyuck Jang; Cheol Seong Hwang; Miyoung Kim // Applied Physics Letters;6/9/2008, Vol. 92 Issue 23, p232906 

    In this investigation, HfO2 thin films were deposited on strained and strain-relaxed epitaxial-SiGe/Si substrates, and subsequently subjected to annealing. Electron energy-loss spectroscopy analysis was used to investigate the electronic structure and composition of the film as well as the...

  • Investigation of oxygen-related defects and the electrical properties of atomic layer deposited HfO2 films using electron energy-loss spectroscopy. Jae Hyuck Jang; Hyung-Suk Jung; Jeong Hwan Kim; Sang Young Lee; Cheol Seong Hwang; Miyoung Kim // Journal of Applied Physics;Jan2011, Vol. 109 Issue 2, p023718 

    The electrical properties of hafnium dioxide (HfO2) thin films are often attributed to the oxygen composition and oxygen-related defects; however, there have been few systematic studies on the electronic structures of such oxygen atoms. In this study, we used electron energy-loss spectroscopy to...

  • Electron energy structure and X-ray spectra of wide-band GaN, AlN, and AlN-GaN semiconductors. Ilyasov, V.; Zhdanova, T.; Nikiforov, I. // Journal of Structural Chemistry;Jan2007, Vol. 48 Issue 1, p66 

    The electronic energy structure of GaN, AlN, and AlGaN crystals with the wurzite structure is calculated by the local coherent potential method using the cluster version of the MT-approximation within the framework of the multiple scattering theory. The calculated densities of electron states...

  • Electron energy-loss spectroscopy analysis of the electronic structure of nitrided Hf silicate films. Ikarashi, Nobuyuki; Miyamura, Makoto; Masuzaki, Koji; Tatsumi, Toru // Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3672 

    We have shown, using electron energy-loss spectroscopy, that incorporating N into a Hf silicate film reduces the band gap. We also experimentally clarified that the Hf atoms in the film are coordinated by N atoms, and we used ab initio electronic structure calculations to show that the...

  • Physisorption of molecular oxygen on C60 thin films. Niklowitz, P. G.; Li, Z. Y.; Jardine, A. P.; Luo, M. F.; Allison, W. // Journal of Chemical Physics;6/1/2004, Vol. 120 Issue 21, p10225 

    The interaction of oxygen molecules with a fullerene surface has been studied using high resolution electron energy loss spectroscopy and temperature programmed desorption. Vibrational excitation of the adsorbed oxygen is observed at 190 meV, an energy value comparable with that for molecular...

  • Oxygen incorporation in Ti2AlC thin films studied by electron energy loss spectroscopy and ab initio calculations. Mockute, A.; Dahlqvist, M.; Hultman, L.; Persson, P.; Rosen, J. // Journal of Materials Science;May2013, Vol. 48 Issue 10, p3686 

    Substitution of C with O in hexagonal inherently nanolaminated Ti2AlC has been studied experimentally and theoretically. Ti2Al(C1-xOx) thin films with x ≤ 0.52 are synthesized by both cathodic arc deposition with the uptake of residual gas O, and solid-state reaction between...

  • Electronic structure of a potential optical crystal YBa3B9O18: Experiment and theory. Zhang, Z. H.; Jianjun Yang; Ming He; Wang, X. F.; Quan Li // Applied Physics Letters;4/28/2008, Vol. 92 Issue 17, p171903 

    Using valence electron energy loss spectroscopy and ab initio band structure calculations, we have studied the basic electronic structure of a potential optical crystal YBa3B9O18. Its optical band gap Eg is experimentally estimated as 6.3 eV and the origins of the individual interband...

  • Atomic resolution study of the interfacial bonding at Si3N4/CeO2-δ grain boundaries. Walkosz, W.; Klie, R. F.; Öğüt, S.; Borisevich, A.; Becher, P. F.; Pennycook, S. J.; Idrobo, J. C. // Applied Physics Letters;8/4/2008, Vol. 93 Issue 5, p053104 

    Using a combination of atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy (EELS) in the scanning transmission electron microscope, we examine the atomic and electronic structures at the interface between Si3N4 (1010) and CeO2-d intergranular film...

  • Ab-initio multiplet calculation of oxygen vacancy effect on Ti-L2,3 electron energy loss near edge structures of BaTiO3. Ootsuki, S.; Ikeno, H.; Umeda, Y.; Moriwake, H.; Kuwabara, A.; Kido, O.; Ueda, S.; Tanaka, I.; Fujikawa, Y.; Mizoguchi, T. // Applied Physics Letters;12/5/2011, Vol. 99 Issue 23, p233109 

    The effect of oxygen vacancy on Ti-L2,3 electron energy-loss near-edge structures (ELNES) of BaTiO3 was theoretically investigated through ab initio multiplet calculation. The presence of an oxygen vacancy influences spectral features not only at the nearest neighbor Ti site but also at Ti sites...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics