TITLE

Composition of Ge(Si) islands in the growth of Ge on Si(111)

AUTHOR(S)
Ratto, Fulvio; Rosei, Federico; Locatelli, Andrea; Cherifi, Salia; Fontana, Stefano; Heun, Stefan; Szkutnik, Pierre-David; Sgarlata, Anna; De Crescenzi, Maurizio; Motta, Nunzio
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/31/2004, Vol. 84 Issue 22, p4526
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
X-ray photoemission electron microscopy (XPEEM) is used to investigate the chemical composition of Ge/Si individual islands obtained by depositing Ge on Si(111) substrates in the temperature range 460–560 °C. We are able to correlate specific island shapes with a definite chemical contrast in XPEEM images, at each given temperature. In particular, strained triangular islands exhibit a Si surface content of 5%–20%, whereas it grows up to 30%–40% for “atoll-like” structures. The island’s stage of evolution is shown to be correlated with its surface composition. Finally, by plotting intensity contour maps, we find that island centers are rich in Si. © 2004 American Institute of Physics.
ACCESSION #
13154674

 

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