High spatial resolution subsurface thermal emission microscopy

Ippolito, S. B.; Thorne, S. A.; Eraslan, M. G.; Goldberg, B. B.; Ünlü, M. S.; Leblebici, Y.
May 2004
Applied Physics Letters;5/31/2004, Vol. 84 Issue 22, p4529
Academic Journal
We apply the numerical aperture increasing lens technique to subsurface thermal emission microscopy of Si integrated circuits. We achieve improvements in the amount of light collected and the spatial resolution, well beyond the limits of conventional thermal emission microscopy. We experimentally demonstrate a lateral spatial resolution of 1.4 μm and a longitudinal spatial resolution of 7.4 μm, for thermal imaging at free space wavelengths up to 5 μm. © 2004 American Institute of Physics.


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