A route to diamond wafers by epitaxial deposition on silicon via iridium/yttria-stabilized zirconia buffer layers

Gsell, S.; Bauer, T.; Goldfuß, J.; Schreck, M.; Stritzker, B.
May 2004
Applied Physics Letters;5/31/2004, Vol. 84 Issue 22, p4541
Academic Journal
A multilayer structure is presented which allows the deposition of high-quality heteroepitaxial diamond films on silicon. After pulsed-laser deposition of a thin yttria-stabilized zirconia (YSZ) layer on silicon, iridium was deposited by e-beam evaporation. Subsequently, diamond nucleation and growth was performed in a chemical vapor deposition setup. The epitaxial orientation relationship measured by x-ray diffraction is diamond(001)[110]∥Ir(001)[110]∥YSZ(001) [110]∥Si(001)[110]. The mosaicity of the diamond films is about an order of magnitude lower than for deposition directly on silicon without buffer layers and nearly reaches the values reported for single-crystal diamond on Ir/SrTiO3. In the effort towards single-crystal diamond wafers, the present solution offers advantages over alternative growth substrates like large-area oxide single crystals due to the low thermal expansion mismatch. © 2004 American Institute of Physics.


Related Articles

  • Epitaxial yttria-stabilized zirconia on hydrogen-terminated Si by pulsed laser deposition. Fork, D. K.; Fenner, D. B.; Connell, G. A. N.; Phillips, Julia M.; Geballe, T. H. // Applied Physics Letters;9/10/1990, Vol. 57 Issue 11, p1137 

    Epitaxial yttria-stabilized zirconia films were grown on Si (100) and Si (111) by pulsed laser deposition. Rutherford backscattering spectroscopy indicates a high degree of crystalline perfection with a channeling minimum yield of 5.3%. A necessary predeposition process is removal of native...

  • Chirally oriented heteroepitaxial thin films grown by pulsed laser deposition: Pt(621) on SrTiO3(621). Francis, Andrew J.; Salvador, Paul A. // Journal of Applied Physics;9/1/2004, Vol. 96 Issue 5, p2482 

    Pulsed laser deposition has been used to grow Pt(621) thin films having a chiral orientation on SrTiO3(621) substrates. Films were deposited over a range of conditions, then characterized for their crystallinity and epitaxy using x-ray diffraction and for their surface morphologies using atomic...

  • Domain matching epitaxy of cubic MgxZn1-xO films on LaAlO3 by pulsed laser deposition. Zhuang, L.; Wong, K.H.; Pang, G.K.H. // Applied Physics A: Materials Science & Processing;Nov2007, Vol. 89 Issue 2, p543 

    Wide band gap MgxZn1-xO alloy films were grown on LaAlO3(100) (LAO) substrates by pulsed laser deposition. Structural characterization by X-ray and electron diffraction reveals a single cubic phase of c-MgxZn1-xO (c-MZO) with composition x>0.6 and heteroepitaxial relationships of (100)c-MZO...

  • Heteroepitaxial growth of (111) 3C-SiC on (110) Si substrate by second order twins. Anzalone, R.; Bongiorno, C.; Severino, A.; D'Arrigo, G.; Abbondanza, G.; Foti, G.; La Via, F. // Applied Physics Letters;6/2/2008, Vol. 92 Issue 22, p224102 

    Cubic (111)-oriented silicon carbide (3C-SiC) heteroepitaxy on (110) silicon substrate was performed by low pressure chemical vapor deposition. A comparison with the previous work by Nishiguchi et al. [Appl. Phy. Lett. 84, 3082 (2004)] shows that the relationship (110) Si∥(111) 3C-SiC could...

  • Macroscopic and nanoscale electrical properties of pulsed laser deposited (100) epitaxial lead-free Na0.5Bi0.5TiO3 thin films. Bousquet, M.; Duclère, J.-R.; Champeaux, C.; Boulle, A.; Marchet, P.; Catherinot, A.; Wu, A.; Vilarinho, P. M.; Députier, S.; Guilloux-Viry, M.; Crunteanu, A.; Gautier, B.; Albertini, D.; Bachelet, C. // Journal of Applied Physics;Feb2010, Vol. 107 Issue 3, p034102-1 

    Epitaxial Na0.5Bi0.5TiO3 thin films presenting various thicknesses were grown by pulsed laser deposition on epitaxial (100) platinum bottom layers supported by (100)MgO single crystal substrates. X-ray diffraction data indicated that all Na0.5Bi0.5TiO3 layers are single-phased and that...

  • Rare Gas Ion Implanted-Silicon Template for the Growth of Relaxed Si1-xGex/Si (100). Regula, G.; Raissi, M.; Lazzari, J.-L.; Chevrier, F.; Burle, N.; Ntsoenzok, E. // AIP Conference Proceedings;2006, Vol. 866 Issue 1, p283 

    P-type (100) float zone Si wafers were implanted at room temperature by Ne or He at high dose (5×1016 cm-2) and low energy (50keV or 10keV respectively). Some of them were annealed at low (700°C) and high (1050°C) temperatures to form a close surface buried layer of tiny cavities and...

  • Growth and characterization of LaSrMnO thin films prepared by pulsed laser deposition on different substrates. Navasery, M.; Halim, S.; Soltani, N.; Bahmanrokh, G.; Erfani, M.; Chen, S.; Lim, K.; Awang Kechik, M. // Journal of Materials Science: Materials in Electronics;Mar2014, Vol. 25 Issue 3, p1317 

    Colossal magnetoresistance LaSrMnO (LSMO) thin films were directly grown on MgO(100), Si(100) wafer and glass substrates by pulsed laser deposition technique. The films were characterized using X-ray diffraction (XRD), field emission-scanning electron microscope and atomic force microscopy...

  • High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy. Kai Cheng; Leys, M.; Degroote, S.; Germain, M.; Borghs, G. // Applied Physics Letters;5/12/2008, Vol. 92 Issue 19, p192109 

    High quality GaN layers with dislocation density of (3.0±0.5)×108/cm2 have been grown on silicon(111) substrates using a combination of AlGaN intermediate layers and a SixNy interlayer. A smooth and fully coalesced layer was obtained by virtue of a high temperature growth process which...

  • Epitaxial growth of Ba[sub 1-x]K[sub x]BiO[sub 3] thin films by pulsed-laser deposition. Norton, D.P.; Budai, J.D.; Chakoumakos, B.C.; Feenstra, R. // Applied Physics Letters;1/25/1993, Vol. 62 Issue 4, p414 

    Examines the epitaxial growth of Ba[sub 1-x]K[sub x]BiO[sub 3] thin films by pulsed-laser deposition. Orientation of the epitaxial films; Use of x-ray diffraction to assess crystal structures; Determination of optimal growth temperature.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics