TITLE

Polarity control of ZnO on sapphire by varying the MgO buffer layer thickness

AUTHOR(S)
Kato, Hiroyuki; Miyamoto, Kazuhiro; Sano, Michihiro; Yao, Takafumi
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/31/2004, Vol. 84 Issue 22, p4562
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Polarity-controlled ZnO films with an MgO buffer layer were grown on c-plane sapphire by plasma-assisted molecular-beam epitaxy. Convergent beam electron diffraction results showed that Zn-polarity (+c) growth occurred when the MgO layer was thicker than 3 nm, whereas O-polarity (-c) growth occurred when the layer was less than 2 nm. Reflection high-energy electron diffraction results revealed that MgO growth was Stranski–Krastanov mode, and that the growth mode transition from two- to three-dimensional occurred when the layer was thicker than 1 nm. In conclusion, polarity conversion apparently occurs due to the different atomic structure between the wetting layer and islands of MgO. © 2004 American Institute of Physics.
ACCESSION #
13154662

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics