TITLE

Electrically injected InGaAs/GaAs quantum-dot microcavity light-emitting diode operating at 1.3 μm and grown by metalorganic chemical vapor deposition

AUTHOR(S)
Tasco, V.; Todaro, M. T.; De Vittorio, M.; De Giorgi, M.; Cingolani, R.; Passaseo, A.; Ratajczak, J.; Katcki, J. W.
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/24/2004, Vol. 84 Issue 21, p4155
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present a quantum-dot microcavity light-emitting diode emitting at 1.3 μm at room temperature. The long wavelength emission is achieved by using InGaAs quantum dots directly grown on GaAs, by metalorganic chemical vapor deposition. The device exhibits electroluminescence bright emission, peaked at 1298 nm and with a full width at half maximum of 6.5 meV. © 2004 American Institute of Physics.
ACCESSION #
13077546

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics