Growth and transport properties of complementary germanium nanowire field-effect transistors

Greytak, Andrew B.; Lauhon, Lincoln J.; Gudiksen, Mark S.; Lieber, Charles M.
May 2004
Applied Physics Letters;5/24/2004, Vol. 84 Issue 21, p4176
Academic Journal
n- and p-type Ge nanowires were synthesized by a multistep process in which axial elongation, via vapor–liquid–solid (VLS) growth, and doping were accomplished in separate chemical vapor deposition steps. Intrinsic, single-crystal, Ge nanowires prepared by Au nanocluster-mediated VLS growth were surface-doped in situ using diborane or phosphine, and then radial growth of an epitaxial Ge shell was used to cap the dopant layer. Field-effect transistors prepared from these Ge nanowires exhibited on currents and transconductances up to 850 μA/μm and 4.9 μA/V, respectively, with device yields of >85%. © 2004 American Institute of Physics.


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