Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates

Dahdah, N. El; Aubin, G.; Harmand, J.-C.; Ramdane, A.; Shen, A.; Devaux, F.; Garreau, A.; Benkelfat, B. -E.
May 2004
Applied Physics Letters;5/24/2004, Vol. 84 Issue 21, p4268
Academic Journal
We report on InGaAs/InGaAlAs electro-absorption modulators for ultrafast all-optical signal processing. The structure design is based on the use of small conduction and valence band offsets. Switching windows as short as 5 ps for a 2 V applied reverse bias have been obtained by cross-absorption modulation. © 2004 American Institute of Physics.


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