Influence of O and C co-implantation on the lattice site of Er in GaN

Vries, B. De; Matias, V.; Vantomme, A.; Wahl, U.; Rita, E. M. C.; Alves, E.; Lopes, A. M. L.; Correia, J. G.
May 2004
Applied Physics Letters;5/24/2004, Vol. 84 Issue 21, p4304
Academic Journal
The lattice location of low-dose implanted Er in GaN, GaN:O, and GaN:C was investigated using the emission channeling technique. The conversion electrons emitted by the probe isotope 167mEr give direct evidence that the majority (≈90%) of Er atoms are located on substitutional Ga sites for all samples. Annealing up to 900 °C does not change these fractions, although it reduces the Er root-mean-square (rms) displacements. The only visible effect of oxygen or carbon doping is a small increase in the rms displacements with respect to the undoped sample. © 2004 American Institute of Physics.


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