A probe of intrinsic valence band electronic structure: Hard x-ray photoemission

Takata, Y.; Tamasaku, K.; Tokushima, T.; Miwa, D.; Shin, S.; Ishikawa, T.; Yabashi, M.; Kobayashi, K.; Kim, J. J.; Yao, T.; Yamamoto, T.; Arita, M.; Namatame, H.; Taniguchi, M.
May 2004
Applied Physics Letters;5/24/2004, Vol. 84 Issue 21, p4310
Academic Journal
Hard x-ray valence band photoemission spectroscopy (PES) is realized using high-energy and high-brilliance synchrotron radiation. High-energy (∼6 keV) excitation results in larger probing depths of photoelectrons compared to conventional PES, and enables a study of intrinsic electronic property of materials in actual device structures much less influenced by surface condition. With this technique, requirements for surface preparation are greatly reduced, if not eliminated. It is a nondestructive tool to determine electronic structure from surface to genuine bulk as shown by a study on SiO2/Si(100). Electronic structure modification related to the ferromagnetism in the diluted magnetic semiconductor Ga0.96Mn0.04N is also observed. © 2004 American Institute of Physics.


Related Articles

  • Building on a Basic X-ray Inspection Platform. Frank, Udo E. // Advanced Packaging;Sep2005, Vol. 14 Issue 9, p24 

    Discusses the basic configuration for an X-ray inspection system. Applications of X-ray inspection in the semiconductor industry; Open microfocus tube with a transmission target; Geometric magnification; Four-axes manipulator capability; Digital-imaging chain.

  • Taking the wet-developable route to applying BARC in implant layers. Xie Shao; Guerrero, Alice; Yiming Gu // Solid State Technology;Jun2004, Vol. 47 Issue 6, p61 

    Focuses on the application of bottom antireflective coatings (BARC) in implant layers. Reflective and process window improvements; Wet-developable BARC challenges.

  • Development of superconducting phases in BSCCO and Ba-BSCCO by sol spray process. Durrani, S. K.; Qureshi, A. H.; Qayyum, S.; Arif, M. // Journal of Thermal Analysis & Calorimetry;Jan2009, Vol. 95 Issue 1, p87 

    The effects of barium substitution for Bi or Sr sites on the growth of superconducting phases have been studied. The sol spray process has been used to synthesis the Bi-Sr-Ca-Cu-O (BSCCO) and Ba-BSCCO homogeneous ceramic powders. Thermogravimetric (TG), differential thermal analysis (DTA), X-ray...

  • Comparative Study of ZnO Thin Films Prepared by Different Sol-Gel Route. Ghodsi, F. E.; Absalan, H. // Acta Physica Polonica, A.;Oct2010, Vol. 118 Issue 4, p659 

    The ZnO thin films were prepared from zinc acetate dihydrate as main precursor by using sol-gel method and deposited by drainage and dip coating technique. Four different routes and coating techniques were used for the preparation of samples. The morphology, optical, and structural properties of...

  • Nano-Scale Analysis Using Synchrotron-Radiation: Applications in the Semiconductor Industry. Zschech, Ehrenfried; Geisler, Holm; Rinderknecht, Jochen; Schneider, Gerd; Spolenak, Ralph; Schmeisser, Dieter // Current Nanoscience;Aug2008, Vol. 4 Issue 3, p256 

    In semiconductor industry, process control and physical failure analysis were dominated by light and electron microscopy as well as surface analysis techniques including X-ray photoelectron spectroscopy (XPS) until the end of the last century. During the past decade, X-ray diffraction (XRD) and...

  • Deposition of thin Bi2Te3 and Sb2Te3 films by pulsed laser ablation. Virt, I. S.; Shkumbatyuk, T. P.; Kurilo, I. V.; Rudyi, I. O.; Lopatinskyi, T. Ye.; Linnik, L. F.; Tetyorkin, V. V.; Phedorov, A. G. // Semiconductors;Apr2010, Vol. 44 Issue 4, p544 

    Bi2Te3 and Sb2Te3 films were obtained by pulsed laser ablation. The films were deposited in vacuum (1 × 10−5 Torr) on single crystal substrates of Al2O3 (0001), BaF2 (111), and fresh cleavages of KCl or NaCl (001) heated to 453–523 K. The films were 10–1500 nm thick. The...

  • Growth of TiN/GaN metal/semiconductor multilayers by reactive pulsed laser deposition. Rawat, Vijay; Sands, Timothy // Journal of Applied Physics;9/15/2006, Vol. 100 Issue 6, p064901 

    TiN/GaN metal/semiconductor multilayers were grown by reactive pulsed laser deposition in an ammonia ambient on sapphire and MgO substrates for potential application in solid-state thermionic direct energy conversion devices. Crystallographic analysis of the multilayers by high-resolution x-ray...

  • X-ray microanalysis of wire-bond reliability.  // Solid State Technology;Jun2006, Vol. 49 Issue 6, p8 

    The article provides information on the x-ray microanalysis in determining the wire-bond reliability. Though the emergence of new techniques for the connection of the die to the circuit board, the wire bond is still a mainstay of the semiconductor industry. The usage of a scanning electron...

  • Interaction between organic semiconductors and LiF dopant. Yuan, Y.; Grozea, D.; Han, S.; Lu, Z. H. // Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p4959 

    X-ray photoemission spectroscopy and optical absorption have been used to study the interaction between LiF dopant and various organic semiconductor hosts including N,N′-diphenyl-N,N′-bis (3-methylphenyl)-1, 1′-biphenyl-4, 4′-diamine (TPD), N,N′-bis...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics