Quantized charge pumping through a quantum dot by surface acoustic waves

Ebbecke, J.; Fletcher, N. E.; Janssen, T. J. B. M.; Ahlers, F J.; Pepper, M.; Beere, H. E.; Ritchie, D. A.
May 2004
Applied Physics Letters;5/24/2004, Vol. 84 Issue 21, p4319
Academic Journal
We present a realization of quantized charge pumping. A lateral quantum dot is defined by metallic split gates in a GaAs/AlGaAs heterostructure. A surface acoustic wave whose wavelength is twice the dot length is used to pump single electrons through the dot at a frequency f=3 GHz. The pumped current shows a regular pattern of quantization at values I=nef over a range of gate voltage and wave amplitude settings. The observed values of n, the number of electrons transported per wave cycle, are determined by the number of electronic states in the quantum dot brought into resonance with the Fermi level of the electron reservoirs during the pumping cycle.


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