Comparison of Fe/Schottky and Fe/Al2O3 tunnel barrier contacts for electrical spin injection into GaAs

Van 't# Erve, O. M. J.; Kioseoglou, G.; Hanbicki, A. T.; Li, C. H.; Jonker, B. T.; Mallory, R.; Yasar, M.; Petrou, A.
May 2004
Applied Physics Letters;5/24/2004, Vol. 84 Issue 21, p4334
Academic Journal
We compare electrical spin injection from Fe films into identical GaAs-based light-emitting diodes (LEDs) using different tunnel barriers—a reverse-biased Fe/AlGaAs Schottky contact and an Fe/Al2O3 barrier. Both types of structures are formed in situ using a multichamber molecular-beam epitaxy system. A detailed analysis of the transport data confirms that tunneling occurs in each case. We find that the spin polarization achieved in the GaAs using the Al2O3 barrier is 40% (best case; 30% typical), but the electrical efficiency is significantly lower than that of the Fe Schottky contact. © 2004 American Institute of Physics.


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