TITLE

Electron-Stimulated Desorption of Rare-Earth Metal Atoms

AUTHOR(S)
Ageev, V. N.; Kuznetsov, Yu. A.; Potekhina, N. D.
PUB. DATE
May 2004
SOURCE
Physics of the Solid State;May2004, Vol. 46 Issue 5, p975
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The yield of europium and samarium atoms in electron-stimulated desorption from layers of rare-earth metals (REMs) adsorbed on the surface of oxidized tungsten has been measured as a function of the incident electron energy, surface coverage by REMs, degree of tungsten oxidation, and substrate temperature. The measurements were performed using the time-of-flight method with a surface-ionization-based detector within the substrate temperature interval 140–600 K. The yield studied as a function of electron energy has a resonance character. Overlapping resonance peaks of Sm atoms are observed at electron energies of 34 and 46 eV, and those of Eu atoms, at 36 and 41 eV. These energies correlate well with the REM 5p and 5s core-level excitation energies. The REM yield is a complex function of the REM coverage and substrate temperature. The peaks due to REM atoms are seen at low REM coverages only, and their intensity usually passes through a maximum with increasing coverage and substrate temperature. The concentration dependence of the REM atom yield is affected by the deposition of slow Ba+ ions, but only if they are deposited after the REM adsorption. At higher REM coverages, additional peaks are observed at electron energies of 42, 54, and 84 eV, which originate from excitation of the 5p and 5s tungsten levels and result from desorption of SmO and EuO molecules. The temperature dependence of the intensity of these peaks is explained to be due to the order–disorder phase transition. The desorption of REM atoms is the result of their reversed motion through the adsorbed REM layer, and the SmO and EuO molecules desorb due to the formation of an antibonding state between the REM oxide molecules and the tungsten ions.© 2004 MAIK “Nauka / Interperiodica”.
ACCESSION #
13044224

 

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