TITLE

Organic-metal-semiconductor transistor with high gain

AUTHOR(S)
Meruvia, M.S.; Hümmelgen, I.A.; Sartorelli, M.L.; Pasa, A.A.; Schwarzacher, W.
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/17/2004, Vol. 84 Issue 20, p3978
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We use evaporated C60 as the emitter in a vertical transistor structure with Au base and Si collector. The proportion of emitted electrons that overcome the barrier is measured as at least 0.99. Our metal-base transistor is easy to fabricate as it does not involve wafer bonding or require perfect semiconductor-on-metal growth.
ACCESSION #
13029230

 

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