Metal/Al-doped ZnO ohmic contact for AlGaN/GaN high electron mobility transistor

Nishizono, K.; Okada, M.; Kamei, M.; Kikuta, D.; Tominaga, K.; Ohno, Y.; Ao, J.P.
May 2004
Applied Physics Letters;5/17/2004, Vol. 84 Issue 20, p3996
Academic Journal
Ohmic property for AlGaN/GaN high electron mobility transistor was investigated by insetting a highly Al-doped ZnO between the metal and AlGaN/GaN structure. The Al-doped ZnO was deposited by dc magnetron sputtering method and Ti/Al/Ni/Au was deposited on the ZnO by evaporation. Prior to the ZnO deposition, the surface of the samples was treated by O2 plasma, HCl and NH4OH, respectively. Good ohmic performance was obtained with contact resistance of 2.7 Ω mm even without annealing. The lowest contact resistance was 2.0 Ω mm after being annealed at 300 °C for the sample with HCl treatment before ZnO deposition.


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