Study of the temperature-dependent interaction of 4H–SiC and 6H–SiC surfaces with atomic hydrogen

Losurdo, Maria; Bruno, Giovanni; Brown, April; Tong-Ho Kim
May 2004
Applied Physics Letters;5/17/2004, Vol. 84 Issue 20, p4011
Academic Journal
The interaction of 4H- and 6H-SiC (0001)Si surfaces with atomic hydrogen produced by a remote rf plasma source is investigated. The impact of the low temperature (200 °C) and high temperature (750 °C) interaction on chemical and morphological surface modifications is addressed with in situ real time monitoring using spectroscopic ellipsometry. It is found that the interaction of SiC surfaces with atomic hydrogen at 200 °C is suitable for producing clean, atomically ordered, smooth and terraced surfaces with a stoichiometry associated with a √3x √3R30° reconstruction, ideal for GaN heteroepitaxy.


Related Articles

  • Phonon-assisted stimulated emission from pendeoepitaxy GaN stripes grown on 6H-SiC substrates. Chang, Y. C.; Li, Y.-L.; Thomson, D. B.; Davis, R. F. // Applied Physics Letters;7/30/2007, Vol. 91 Issue 5, p051119 

    Phonon-assisted stimulated emission has been demonstrated by photopumping GaN stripes grown via pendeoepitaxy on 6H-SiC (0001) substrates. Transverse-electric-polarized emission with well-defined Fabry-Pérot modes located at one longitudinal optical phonon energy (90 meV) below the band gap...

  • Power FET gate driver design runs at up to 225°C. Prophet, Graham // EDN Europe;12/ 1/2011, p16 

    The article offers information on Mont-Saint-Guibert, Belgium-based semiconductor company Cissoid SA. Cissoid specialises in devices that tolerate extended, and especially high, temperatures. The company has designed gate drive for high temperature power transistors including silicon carbide and...

  • Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy. Xie, M. H.; Xie, M.H.; Zheng, L. X.; Zheng, L.X.; Cheung, S. H.; Cheung, S.H.; Ng, Y. F.; Ng, Y.F.; Wu, Huasheng; Huasheng Wu; Tong, S. Y.; Tong, S.Y.; Ohtani, N. // Applied Physics Letters;8/21/2000, Vol. 77 Issue 8 

    We observe a significant reduction of threading dislocations in GaN grown on vicinal substrates of SiC(0001). Using scanning tunneling microscopy, we find films grown on vicinal substrates maintain the surface misorientation of the substrate and display terraces with straight edges. On top of...

  • Growth and characterizations of GaN on SiC substrates with buffer layers. Lin, C.F.; Cheng, H.C.; Chi, G. C.; Feng, M. S.; Guo, J. D.; Minghuang Hong, J.; Chen, C. Y. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2378 

    Studies the growth and characterizations of galliumnitride on silicon carbide substrates with buffer layers. Enhanced electron mobility; Hall measurement and sheet carrier density; Bulk carrier density and lattice constants.

  • Buffer free direct growth of GaN on 6H-SiC by metalorganic vapor phase epitaxy. Lahreche, H.; Leroux, M. // Journal of Applied Physics;1/1/2000, Vol. 87 Issue 1, p577 

    Presents a three steps growth process that enables the growth of high quality mirrorlike Gallium Nitride (GaN) layers without using A1N buffer layers. Physical characteristics of both GaN and Silicon Carbide; Details of the growth method; Strain state and correlated optical properties.

  • Molecular beam epitaxy growth of GaN on C-terminated 6H-SiC (000[OVERLINE]1[/OVERLINE]) surface. Guan, Z. P.; Guan, Z.P.; Cai, A. L.; Cai, A.L.; Cabalu, J. S.; Cabalu, J.S.; Porter, H. L.; Porter, H.L.; Huang, S. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    We report the results of successful growth of GaN on the C-terminated surface of SiC. A combination of direct heating and hydrogen plasma treatment was employed for surface preparation. High-quality epitaxy was achieved in epilayers as thin as 2000 Ã…, as evidenced by the x-ray diffraction...

  • Structural properties of cubic GaN epitaxial layers grown on β-SiC. Teles, L. K.; Scolfaro, L. M. R.; Enderlein, R.; Leite, J. R.; Josiek, A.; Schikora, D.; Lischka, K. // Journal of Applied Physics;12/1/1996, Vol. 80 Issue 11, p6322 

    Presents a study which investigated the structural properties of cubic gallium nitride epitaxial layers grown on Î’-silicon carbide substrates. Description of the self-consistent total energy calculation method; Application of system and parameter specifications; Comparison of cohesion...

  • Substrate-polarity dependence of metal-organic vapor-phase epitaxy-grown GaN on SiC. Sasaki, T.; Matsuoka, T. // Journal of Applied Physics;11/1/1988, Vol. 64 Issue 9, p4531 

    Presents a study that described metal-organic vapor-phase epitaxy of gallium nitride on silicon carbide. Methodology; Examination of the surface morphology of gallium nitride; Evaluation of the surface polarity of the samples.

  • Impact of design on electrical characteristics of 3.5 kV 4H-SiC JBS diode. Brosselard, Pierre; Chevalier, Florian; Proux, Benjamin; Thierry-Jebali, Nicolas; Bevilacqua, Pascal; Tournier, Dominique; Planson, Dominique; Grosset, Grégory; Dupuy, Lionel // Materials Science Forum;2014, Vol. 806, p117 

    This work reports on the fabrication and electrical characterization of 3 different diodes. The first one is a Schottky diode with a single 50 µm P+ ring between the edge termination and the active area. The two other diodes are JBS with a 3 µm P+ strips separated by 4 µm and 8 µm...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics