TITLE

Study of the temperature-dependent interaction of 4H–SiC and 6H–SiC surfaces with atomic hydrogen

AUTHOR(S)
Losurdo, Maria; Bruno, Giovanni; Brown, April; Tong-Ho Kim
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/17/2004, Vol. 84 Issue 20, p4011
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The interaction of 4H- and 6H-SiC (0001)Si surfaces with atomic hydrogen produced by a remote rf plasma source is investigated. The impact of the low temperature (200 °C) and high temperature (750 °C) interaction on chemical and morphological surface modifications is addressed with in situ real time monitoring using spectroscopic ellipsometry. It is found that the interaction of SiC surfaces with atomic hydrogen at 200 °C is suitable for producing clean, atomically ordered, smooth and terraced surfaces with a stoichiometry associated with a √3x √3R30° reconstruction, ideal for GaN heteroepitaxy.
ACCESSION #
13029219

 

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