TITLE

Analysis of plasma treatment and vapor heat treatment for thin-film transistors by extracting trap densities at front and back interfaces

AUTHOR(S)
Kimura, Mutsumi; Abe, Daisuke; Inoue, Satoshi; Shimoda, Tatsuya; Tam, Simon W.-B.
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/17/2004, Vol. 84 Issue 20, p4026
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Hydrogen (H) plasma treatment, oxygen (O) plasma treatment and water (H2O)-vapor heat treatment for polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) have been analyzed by separately extracting trap density at a front silicon-oxide interface (DF) and trap density at a back interface (DB). It is found that the H plasma treatment is apt to generate DF and DB. The O plasma treatment reduces DF, while the H2O-vapor heat treatment reduces both DF and DB. Improvement of transistor characteristics of poly-Si TFTs depends on understanding these results.
ACCESSION #
13029214

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics