Coulomb blockade in a silicon/silicon–germanium two-dimensional electron gas quantum dot

Klein, L.J.; Slinker, K.A.; Truitt, J.L.; Goswami, S.; Lewis, K.L.M.; Coppersmith, S.N.; van der Weide, D.W.; Friesen, Mark; Blick, R.H.; Savage, D.E.; Lagally, M.G.; Tahan, Charlie; Joynt, Robert; Eriksson, M.A.; Chu, J.O.; Ott, J.A.; Mooney, P.M.
May 2004
Applied Physics Letters;5/17/2004, Vol. 84 Issue 20, p4047
Academic Journal
We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coulomb blockade with a single electron charging energy of 3.2 meV.


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