Terahertz quantum-well photodetector

Liu, H.C.; Song, C.Y.; SpringThorpe, A.J.; Cao, J.C.
May 2004
Applied Physics Letters;5/17/2004, Vol. 84 Issue 20, p4068
Academic Journal
The design and projected performance of quantum-well infrared photodetectors (QWIP) for the terahertz (1-10 THz) or the very-far-infrared region are presented together with our initial demonstration of a GaAs/AlGaAs QWIP working at photon energies below the optical phonons. We point out the problem with this initial device, discuss possible causes, and suggest areas of improvement.


Related Articles

  • Influence of segregation effects on the electroluminescence spectra of InGaAs/GaAs quantum well heterostructures grown by H-MOVPE. Akchurin, R. Kh.; Andreev, A. Yu.; Berliner, L. B.; Govorkov, O. I.; Duraev, V. P.; Maldzhy, A. A.; Marmalyuk, A. A.; Padalitsa, A. V.; Petrovsky, A. R.; Sabitov, D. V.; Sukharev, A. // Semiconductors;Jan2009, Vol. 43 Issue 1, p63 

    Surface segregation during epitaxial growth of stressed InGaAs/GaAs quantum-well heterostructures significantly distorts the nominal concentration profile of quantum wells. The consideration of the effect for growth conditions and elastic stresses appearing during epitaxy on segregation made it...

  • Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb–GaInAs/GaAs bilayer quantum wells. Kudrawiec, R.; S&ecedil;k, G.; Ryczko, K.; Misiewicz, J.; Harmand, J.C. // Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3453 

    GaAsSb–GaInAs/GaAs bilayer quantum wells which consist of two adjacent layers of GaAsSb and GaInAs sandwiched between GaAs barriers have been investigated by photoreflectance (PR) spectroscopy. The oscillator strengths of optical transitions in such multiheterointerface structures have...

  • GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission. Harmand, J.C.; Li, L.H.; Patriarche, G.; Travers, L. // Applied Physics Letters;5/17/2004, Vol. 84 Issue 20, p3981 

    The growth of highly strained GaInAs quantum wells on GaAs is investigated in the presence of Sb. Sb appears as an adequate isoelectronic surfactant: the lateral relaxation of strain is shown to be significantly delayed in comparison with a Sb-free growth. This effect is used to extend the...

  • Investigation of Carrier Recombination Processes and Transport Properties in GaInAsN/GaAs Quantum Wells. Fehse, R.; Sweeney, S. J.; Adams, A. R.; O'Reilly, E. P.; McConville, D.; Riechert, H.; Geelhaar, L. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p985 

    It is shown that the dramatic changes in threshold current density with changing active region growth temperature in 1.3μm GaInNAs-based lasers can be attributed almost entirely to changes in the defect related monomolecular recombination current in the optically active material. In addition,...

  • Ultrafast dynamics of neutral and charged triplet magnetoexcitons in a high-mobility density-tunable GaAs-AlGaAs single quantum well. Schröter, P.; Su, B.; Heitmann, D.; Schüller, C.; Reinwald, M.; Tranitz, H.-P.; Wegscheider, W. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1172 

    By means of spectrally resolved degenerate four-wave mixing spectroscopy, we have investigated a modulation doped AlGaAs/GaAs single quantum well. We obtain dephasing times of neutral and charged excitons, indicating that the charged excitons (trions) are not localized. A quantum beating between...

  • Nonlinear Intersubband Photoabsorption in Asymmetric Single Quantum Wells. Wijewardane, H. O.; Ullrich, C. A. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1141 

    A density-matrix approach combined with time-dependent density-functional theory is used to calculate the intersubband photoabsorption in a strongly driven, DC-biased GaAs/AlGaAs single quantum well. For certain frequencies and intensities of the driving field, optical bistability is observed....

  • Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs)/GaAs quantum wells. Hantke, K.; Heber, J. D.; Chatterjee, S.; Klar, P. J.; Volz, K.; Stolz, W.; Rühle, W. W.; Polimeni, A.; Capizzi, M. // Applied Physics Letters;12/19/2005, Vol. 87 Issue 25, p252111 

    We measured time-resolved photoluminescence on as-grown, annealed, as well as annealed and hydrogenated (Ga0.7In0.3)(N0.006As0.994)/GaAs quantum-well structures. The postgrowth treatment changes not only the photoluminescence decay time but also the intensity of photoluminescence directly after...

  • Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells. Sun, Z.; Xu, Z. Y.; Yang, X. D.; Sun, B. Q.; Ji, Y.; Zhang, S. Y.; Ni, H. Q.; Niu, Z. C. // Applied Physics Letters;1/2/2006, Vol. 88 Issue 1, p011912 

    The influence of nonradiative recombination on the photoluminescence (PL) decay dynamics in GaInNAs/GaAs quantum wells is studied by time-resolved photoluminescence under various excitation intensities. It is found that the PL decay process strongly depends on the excitation intensity. In...

  • Quantum-well saturable absorber at 1.55 μm on GaAs substrate with a fast recombination rate. Le Dû, M.; Harmand, J.-C.; Mauguin, O.; Largeau, L.; Travers, L.; Oudar, J.-L. // Applied Physics Letters;5/15/2006, Vol. 88 Issue 20, p201110 

    We propose and realize a structure designed for fast saturable absorber devices grown on GaAs substrate. The active region consists of a 1.55 μm absorbing GaInNAsSb quantum well (QW) surrounded by two narrow QWs of GaAsN with a N concentration up to 13%. Photoexcited carriers in the GaInNAsSb...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics