TITLE

The normal-state resistivity of grain boundaries in YBa2Cu3O7-δ

AUTHOR(S)
Ransley, J.H.T.; Mennema, S.H.; Sandeman, K.G.; Burnell, G.; Tarte, E.J.; Evetts, J.E.; Blamire, M.G.; Kye, J.I.; Oh, B.
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/17/2004, Vol. 84 Issue 20, p4089
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using an optimized bridge geometry, we have been able to make accurate measurements of the properties of YBa2Cu3O7-δ grain boundaries above Tc. The results show a strong dependence of the change of resistance with temperature on grain boundary angle. Analysis of our results in the context of band bending at the boundary allows us to estimate the height of the potential barrier present at the grain boundary interface.
ACCESSION #
13029193

 

Related Articles

  • Grain-boundary recombination in Cu(In,Ga)Se2 solar cells. Gloeckler, Markus; Sites, James R.; Metzger, Wyatt K. // Journal of Applied Physics;12/1/2005, Vol. 98 Issue 11, p113704 

    Two-dimensional simulations are performed to investigate the impact of grain boundaries (GBs) on Cu(In,Ga)Se2 (CIGS) solar-cell performance. Charged defect levels and compositional variations at GBs are considered. Neutral grain boundaries in the CIGS layer are predicted to be most detrimental...

  • Theoretical study of hydrogen absorption near symmetric tilt grain boundaries in Pd and TiFe. Kul'kov, S. S.; Eremeev, S. V.; Kul'kova, S. E. // Technical Physics;Aug2009, Vol. 54 Issue 8, p1204 

    The results of calculations of the atomic and electron structure of Pd and TiFe with symmetrical Σ5 tilt grain boundaries obtained using the methods of electron density functional theory are reported. Hydrogen sorption at tilt grain boundaries and corresponding surfaces is considered. It is...

  • Thermoelectric properties of SrTiO3 nano-particles dispersed indium selenide bulk composites. Lee, Min Ho; Rhyee, Jong-Soo; Vaseem, Mohammad; Hahn, Yoon-Bong; Park, Su-Dong; Jin Kim, Hee; Kim, Sung-Jin; Lee, Hyeung Jin; Kim, Chilsung // Applied Physics Letters;6/3/2013, Vol. 102 Issue 22, p223901 

    We investigated the thermoelectric properties of the InSe, InSe/In4Se3 composite, and SrTiO3 (STO) nano-particles dispersed InSe/In4Se3 bulk composites. The electrical conductivity of the InSe/In4Se3 composite with self-assembled phase separation is significantly increased compared with those of...

  • Strongly enhanced current-carrying performance in MgB2 tape conductors by C60 doping. Zhang, Xianping; Ma, Yanwei; Gao, Zhaoshun; Wang, Dongliang; Wang, Lei; Liu, Wei; Wang, Chunru // Journal of Applied Physics;May2008, Vol. 103 Issue 10, p103915 

    By utilizing C60 as a viable alternative dopant, we demonstrate a simple and industrially scalable route that yields a 10∼15-fold improvement in the in-high-field current densities of MgB2 tape conductors. For example, a Jc value higher than 4×104 A/cm2 (4.2 K, 10 T), which exceeds that...

  • Effective area reduction in directly coupled superconducting quantum interference device based micromagnetometers. Prigiobbo, A.; Sarnelli, E. // Journal of Applied Physics;Feb2008, Vol. 103 Issue 4, p043906 

    We have designed and tested a set of YBa2Cu3O7-δ (YBCO) directly coupled superconducting quantum interference devices (SQUIDs). The proposed layout introduces a reduction of the device effective area that leads to high design flexibility for micromagnetometer sensors. SQUID magnetometers have...

  • Columns formed by multiple twinning in nickel layers-An approach of grain boundary engineering by electrodeposition. Alimadadi, Hossein; Bastos Fanta, Alice; Somers, Marcel A. J.; Pantleon, Karen // Applied Physics Letters;7/15/2013, Vol. 103 Issue 3, p031918 

    Complementary microscopic and diffraction based methods revealed a peculiar microstructure of electrodeposited nickel. For the as-deposited layer, thus, without any additional treatment, multiple twinning yields a high population of Σ3n boundaries, which interrupts the network of normal high...

  • Analysis of carrier transport in quaterrylene thin film transistors formed by ultraslow vacuum deposition. Hayakawa, Ryoma; Petit, Matthieu; Chikyow, Toyohiro; Wakayama, Yutaka // Journal of Applied Physics;Jul2008, Vol. 104 Issue 2, p024506 

    Quaterrylene field-effect transistors (FETs) with top-contact Au electrodes were formed on a SiO2 (200 nm)/p-Si (001) substrate by an ultraslow vacuum deposition technique, and their carrier transport was investigated. The quaterrylene FETs showed typical p-channel transistor behavior. The...

  • Current image tunneling spectroscopy of boron-doped nanodiamonds. Hsiu-Fung Cheng; Yen-Chih Lee; Su-Jien Lin; Yi-Ping Chou; Tom T. Chen; I-Nan Lin // Journal of Applied Physics;2/15/2005, Vol. 97 Issue 4, p044312 

    The electron field emission properties of the nanodiamond films were examined using scanning tunneling microscopic (STM) technique. Current image tunneling spectroscopic measurements reveal the direct dependence of electron tunneling/field emission behavior of the films on the proportion of...

  • Faceted Grain Boundaries in Polycrystalline Films. Bobylev, S. V.; Ovid'ko, I. A. // Physics of the Solid State;Oct2003, Vol. 45 Issue 10, p1926 

    A theoretical model is proposed for describing a new mechanism of misfit-stress relaxation in polycrystalline films, namely, the formation of faceted grain boundaries whose facets are asymmetric tilt boundaries. The ranges of parameters (the film thickness, misfit parameter, angle between...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics