Formation of highly aligned ZnO tubes on sapphire (0001) substrates

Zhang, B.P.; Binh, N.T.; Wakatsuki, K.; Segawa, Y.; Yamada, Y.; Usami, N.; Kawasaki, M.; Koinuma, H.
May 2004
Applied Physics Letters;5/17/2004, Vol. 84 Issue 20, p4098
Academic Journal
ZnO tubes were epitaxially grown on sapphire (0001) substrates by metalorganic chemical vapor deposition. The tubes grew along the substrate normal and were characterized by hexagon-shaped cross sections. All of the tubes possessed the same epitaxial relationships with respect to the substrate. Both reactor pressure and growth temperature were found to play an important role in the formation of ZnO tubes. Spiral column growth mode was found to be responsible for the formation of ZnO tubes.


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