An InGaN-based horizontal-cavity surface-emitting laser diode

Akasaka, Tetsuya; Nishida, Toshio; Makimoto, Toshiki; Kobayashi, Naoki
May 2004
Applied Physics Letters;5/17/2004, Vol. 84 Issue 20, p4104
Academic Journal
An InGaN-based horizontal-cavity surface-emitting laser diode (HCSELD) was fabricated by dry-etching of an InGaN-based multilayer on a SiC substrate and selective-area regrowth of a Mg-doped GaN layer. The InGaN-based HCSELD is a Fabry-Perot laser diode equipped with outer micromirrors that reflect the laser beams upward. The cavity mirrors and outer micromirrors are vertical {11&2macr;0} and inclined {11&2macr;2} facets of the regrown Mg-doped GaN layers, respectively. These grown facets are very smooth and had little angle misalignment. The InGaN-based HCSELD lased by current injection at room temperature. Current-injection lasing for group-III-nitride-based surface-emitting lasers is reported.


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