Reduction of leakage current by Co doping in Pt/Ba0.5Sr0.5TiO3/Nb–SrTiO3 capacitor

Wang, S.Y.; Cheng, B.L.; Can Wang; Dai, S.Y.; Lu, H.B.; Zhou, Y.L.; Chen, Z.H.; Yang, G.Z.
May 2004
Applied Physics Letters;5/17/2004, Vol. 84 Issue 20, p4116
Academic Journal
Effect of Co doping on leakage current has been investigated in capacitor consisting of Ba0.5Sr0.5Ti1-xCoxO3 (BSTC, x =0, 0.002, 0.010) thin film, Pt top electrode, and Nb-doped SrTiO3 (STON) bottom electrode. Co doping remarkably decreases the leakage current in BSTC thin film, such as from 9 × 10-7 A in undoped thin film to 8 × 10-11 A in 1.0 at. % Co-doped BSTC thin film at bias voltage of 6 V. In the case of the Pt electrode positively biased, the leakage current shows space-charge-limited-current behavior. The trap-filled-limit voltage and the calculated trapped electron density increase with Co concentration in BSTC thin film. The mechanism of the reduction of the leakage current by Co doping is discussed.


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