Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition

Potter, R.J.; Marshall, P.A.; Chalker, P.R.; Taylor, S.; Jones, A.C.; Noakes, T.C.Q.; Bailey, P.
May 2004
Applied Physics Letters;5/17/2004, Vol. 84 Issue 20, p4119
Academic Journal
Thin films of hafnium aluminate, with varying aluminum content, have been deposited by liquid injection metalorganic chemical vapor deposition using the metal alkoxide precursors hafnium methyl-methoxy-propanolate and aluminum iso-propoxide. X-ray diffraction analysis showed that the films were amorphous at aluminum concentrations above 7 at. %. Postdeposition annealing indicated that the oxide-transition temperature from amorphous to crystalline increased with aluminum content. Medium-energy ion scattering showed that up to 900 °C, internal oxidation of the silicon substrate had been inhibited. The capacitance-voltage characteristics of the films significantly improved following annealing in dry air.


Related Articles

  • Structure and properties of films based on HfO-ScO double oxide. Yakovkina, L.; Smirnova, T.; Borisov, V.; Jeong-Hwan, S.; Morozova, N.; Kichai, V.; Smirnov, A. // Journal of Structural Chemistry;Aug2011, Vol. 52 Issue 4, p743 

    The results of the investigation of the chemical constitution and structure of (HfO)(ScO) thin films are reported. The films are obtained by chemical vapor deposition (CVD) from hafnium 2,2,6,6-tetramethyl-3,5-heptandionate (Hf(thd)) and scandium 2,2,6,6-tetramethyl-3,5-heptandionate (Sc(thd))...

  • High-k gate deposition: ALD or CVD CVD and even PVD are still on the table. Colombo, Luigi // Solid State Technology;May2004, Vol. 47 Issue 5, p112 

    Discusses the advantages and disadvantages of atomic layer deposition (ALD) versus chemical vapor deposition (CVD) techniques for gate dielectrics. Thickness control and conformality offered by ALD; Composition control and film homogeneity offered by CVD; Deposition temperature for hafnium...

  • Experimental Optimization of growth Parameters of High Quality Green GaN Multiple Quantum Well by Metal-Organic Chemical Vapor Deposition. Feng Wen; Lirong Huang; Liangzhu Tong; Deming Liu // Modern Applied Science;Jun2010, Vol. 4 Issue 6, p49 

    The effects of grow parameters such as barrier thickness, flow ratio of group-III sources (TMIn/(TMIn+TMGa)), well temperature on the properties of green multiple quantum well (MQW) are investigated. The samples were grown by metal-organic chemical vapor deposition (MOCVD). High resolution x-ray...

  • Heteroepitaxial growth of (111) 3C-SiC on (110) Si substrate by second order twins. Anzalone, R.; Bongiorno, C.; Severino, A.; D'Arrigo, G.; Abbondanza, G.; Foti, G.; La Via, F. // Applied Physics Letters;6/2/2008, Vol. 92 Issue 22, p224102 

    Cubic (111)-oriented silicon carbide (3C-SiC) heteroepitaxy on (110) silicon substrate was performed by low pressure chemical vapor deposition. A comparison with the previous work by Nishiguchi et al. [Appl. Phy. Lett. 84, 3082 (2004)] shows that the relationship (110) Si∥(111) 3C-SiC could...

  • Reduction of dislocations in GaN epilayers grown on Si(111) substrate using SixNy inserting layer. Kang Jea Lee; Eun Ho Shin; Kee Young Lim // Applied Physics Letters;8/30/2004, Vol. 85 Issue 9, p1502 

    High-quality GaN films have been grown on Si(111) substrate by metalorganic chemical vapor deposition using a SixNy inserting layer. Due to the large difference of lattice constant and thermal expansion coefficient between GaN and Si,GaN growth on Si(111) substrate usually leads to an initially...

  • High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain. Capellini, G.; De Seta, M.; Zaumseil, P.; Kozlowski, G.; Schroeder, T. // Journal of Applied Physics;Apr2012, Vol. 111 Issue 7, p073518 

    Ge/Si(001) heterostructures grown by means of ultrahigh vacuum chemical vapor deposition have been investigated by means of variable temperature high resolution x ray diffraction in order to investigate the origin of the residual tensile strain observed in this system. To this purpose, we have...

  • Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD. Çörekçi, S.; Öztürk, M.; Bengi, A.; Çakmak, M.; Özçelik, S.; Özbay, E. // Journal of Materials Science;Mar2011, Vol. 46 Issue 6, p1606 

    n AlN buffer layer and a thick-GaN layer for high-electron-mobility transistors (HEMTs) were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The structural and morphological properties of the layers were investigated by high resolution X-ray diffraction (HRXRD)...

  • Direct chemical vapor deposition growth of tunable HfSiON films by a new precursor combination. Bin Xia; Fisher, Matthew L.; Stemper, Harold; Misra, Ashutosh // Journal of Materials Research;Apr2007, Vol. 22 Issue 4, p15 

    Hafnium silicon oxynitride (HfSiON) films were deposited on 200-mm silicon substrates by low-pressure chemical vapor deposition (LPCVD) from a combination of trisilylamine (TSA) and tetrakis(diethylamido)hafnium(IV) (TDEAH) in the temperature range 450 to 575 °C. A highly volatile and...

  • In situ and real-time characterization of metal-organic chemical vapor deposition growth by high resolution x-ray diffraction. Kharchenko, A.; Lischka, K.; Schmidegg, K.; Sitter, H.; Bethke, J.; Woitok, J. // Review of Scientific Instruments;Mar2005, Vol. 76 Issue 3, p033101 

    We present an x-ray diffractometer for the analysis of epitaxial layers during (in situ) metal-organic chemical vapor deposition (MOCVD). Our diffractometer has a conventional x-ray source, does not need a goniometer stage, and is not sensitive to precise adjustment of the samples before...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics