TITLE

Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

AUTHOR(S)
Nan Wu; Qingchun Zhang; Chunxiang Zhu; Chia Chin Yeo; Whang, S.J.; Chan, D.S.H.; Li, M.F.; Byung Jin Cho; Chin, Albert; Dim-Lee Kwong; Du, A.Y.; Tung, C.H.; Balasubramanian, N.
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3741
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Metal-oxide-semiconductor capacitors were fabricated on germanium substrates by using metalorganic-chemical-vapor-deposited HfO2 as the dielectric and TaN as the metal gate electrode. It is demonstrated that a surface annealing step in NH3 ambient before the HfO2 deposition could result in significant improvement in both gate leakage current and the equivalent oxide thickness (EOT). It was possible to achieve a capacitor with an EOT of 10.5 Å and a leakage current of 5.02 × 10-5 A/cm² at 1 V gate bias. X-ray photoelectron spectroscopy analysis indicates the formation of GeON during surface NH3 anneal. The presence of Ge was also detected within the HfO2 films. This may be due to Ge diffusion at the high temperature (∼400 °C) used in the chemical-vapor deposition process.
ACCESSION #
13029176

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics