X-ray photoelectron spectroscopy study on SiO2/Si interface structures formed by three kinds of atomic oxygen at 300 °C

Shioji, M.; Shiraishi, T.; Takahashi, K.; Nohira, H.; Azuma, K.; Nakata, T.; Takata, Y.; Shin, S.; Kobayashi, K.; Hattori, T.
May 2004
Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3756
Academic Journal
Using the high-brilliant synchrotron radiation at SPring-8 we have studied the SiO2/Si interface structures, the interface state densities, and the uniformities of ∼1-nm-thick oxide films formed by three kinds of atomic oxygen at 300 °C by measuring Si 2p photoelectron spectra at the photon energy of 1050 eV and the energy loss spectra of O 1s photoelectrons at the photon energy of 714 eV. Among silicon oxide films studied here the abrupt compositional transition at SiO2/Si interface, the smallest deviation in interface state density, the interface state density comparable to that for thermal oxide formed in dry oxygen at 950 °C, and the highest uniformity was obtained with oxide film formed in krypton-mixed oxygen (Kr:O2=97:3) plasma.


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