Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

Gwo, S.; Wu, C.-L.; Shen, C.-H.; Chang, W.-H.; Hsu, T.M.; Wang, J.-S.; Hsu, J.-T.
May 2004
Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3765
Academic Journal
High-quality InN epitaxial films have been grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a double-buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-InN layer was confirmed by reflection high-energy electron diffraction, x-ray diffraction, and Raman scattering. At room temperature, these films exhibited strong near-infrared (0.6-0.9 eV) photoluminescence (PL). In addition to the optical absorption measurement of absorption edge and direct band nature, the PL signal was found to depend linearly on the excitation laser intensity over a wide intensity range. These results indicate that the observed PL is due to the emission of direct band-to-band recombination rather than the band-to-defect (or impurity) deep emission.


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