Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth

Koida, T.; Chichibu, S.F.; Sota, T.; Craven, M.D.; Haskell, B.A.; Speck, J.S.; DenBaars, S.P.; Nakamura, S.
May 2004
Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3768
Academic Journal
Radiative and nonradiative excitonic transitions in nonpolar (11&2macr;0)AlxGa1-xN/GaN multiple quantum wells (MQWs) grown on the GaN template prepared by lateral epitaxial overgrowth (LEO-GaN) were investigated. The structural advantages of using nonpolar orientations were confirmed by a moderate shift of the photoluminescence (PL) peak energy and negligible change in low-temperature PL lifetime with decreasing GaN well width, both of which are the results of eliminating quantum-confined Stark effects due to the polarization fields that exist in polar (0001) MQWs. Appearance of the correct in-plane light polarization and improved internal quantum efficiency for the PL peak in the MQWs on LEO-GaN were attributed to the reduction in densities of nonradiative defects and bound states.


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