TITLE

Two-dimensional computational model for electrochemical micromachining with ultrashort voltage pulses

AUTHOR(S)
Kenney, Jason A.; Hwang, Gyeong S.; Woonsup Shin
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3774
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have developed a computational model to simulate electrochemical micromachining of conducting substrates with ultrashort voltage pulses. This theoretical approach integrates (i) a circuit model to describe charging and discharging of electrochemical double layers and electric field variation in electrolytes and (ii) the level set method to simulate feature profile evolution during electrochemical etching. Our simulation results of transient current responses and etch profile evolution are qualitatively in agreement with experimental observations. From our simulations, we find that the resolution of etched features is a strong function of the substrate double layer capacity which may be controlled by electrolyte concentration and pulse duration.
ACCESSION #
13029165

 

Related Articles

  • Pulse characteristics of Hg[sub 0.8]Cd[sub 0.2]Te n[sup +]—p junctions. Virt, I. S. // Technical Physics;Jul97, Vol. 42 Issue 7, p841 

    The pulse characteristics of Hg[sub 0.8]Cd[sub 0.2]Te n[sub +]-p junctions are investigated. It is shown that the shape of the voltage pulse appearing in a junction on passage of a forward (reverse) current is determined by the recombination (generation) of nonequilibrium electrons in the hole...

  • Ultrafast pulses create waveguides and microchannels. Bado, Philippe // Laser Focus World;Apr2000, Vol. 36 Issue 4, p73 

    Evaluates the use of ultrashort pulses for ultraprecision micromachining which eliminates heat flow to surrounding material. Description of the ultraviolet photosensitivity of glass; Information on the direct-write of index change; Direct-write of active waveguides.

  • Magnetic field and temperature dependence of terahertz radiation from InAs surfaces excited by femtosecond laser pulses. Hangyo, M.; Migita, M.; Nakayama, K. // Journal of Applied Physics;10/1/2001, Vol. 90 Issue 7, p3409 

    The magnetic field (0–5 T) and temperature (10–300 K) dependence of terahertz radiation from InAs surfaces excited by femtosecond laser pulses has been studied in detail. The radiation intensity is strongly enhanced under the magnetic field and at low temperatures, which is...

  • Thermionic electron emission from narrow band-gap semiconductors under picosecond laser excitation. Mao, Samuel S.; Mao, Xianglei; Jong H. Yoo; Greif, Ralph; Russo, Richard E. // Journal of Applied Physics;4/15/1998, Vol. 83 Issue 8, p4462 

    Provides information on a study using silicon to relate picosecond laser induced thermionic electron emission to the carrier and phonon dynamics of semiconductors. Methodology used to conduct the study; Results of the study; Discussion on the results.

  • Micromachining of quartz with ultrashort laser pulses. Varel, H.; Ashkenasi, D.; Rosenfeld, A.; Wähmer, M.; Campbell, E.E.B. // Applied Physics A: Materials Science & Processing;1997, Vol. 65 Issue 4/5, p367 

    Well-defined and highly reproducible channels of a few micrometres diameter and lengths of over 1 mm have been produced in quartz with laser pulses of 790 nm wavelength (Ti:sapphire) and pulse lengths of 100–200 fs. The channel depth can be controlled by the laser fluence and number of...

  • Surface carrier recombination of a silicon tip under high electric field. Mazumder, B.; Vella, A.; Vurpillot, F.; Martel, G.; Deconihout, B. // Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p073104 

    Using laser assisted atom probe tomography, we investigate the surface recombination processes of a subwavelength Si tip illuminated by an ultrashort laser pulse under high electric field. In practice, by changing the laser wavelength, we demonstrate the presence of a very long electron-phonon...

  • Interaction of Laser Pulse with Semiconductor Carbon Nanotubes: Rabi Oscillations. Daneshfar, Nader // AIP Conference Proceedings;12/27/2011, Vol. 1400 Issue 1, p434 

    In this work we have discussed Rabi oscillations in zigzag semiconductor carbon nanotubes based on the two-band model. We have considered the oscillatory behavior of the electrons in single-walled carbon nanotubes driven by laser electric field beyond strong interband coupling regime. When...

  • Electromechanical instability of microscale structures. Yang, Fuqian // Journal of Applied Physics;9/1/2002, Vol. 92 Issue 5, p2789 

    Electrical pull-in instability of microscale structures is an important failure mechanism in microelectromechanical systems (MEMS), in which there is no equilibrium state for the MEMS structures. Using the elastic membrane theory, the electromechanical interaction of a suspended MEMS structure...

  • Sub-100 femtosecond pulses from an external-cavity surface-emitting InGaAs/InP multiple quantum.... Xiang, W.H.; Friberg, S.R.; Watanabe, K.; Machida, S.; Sakai, Y.; Iwamura, H.; Yamamoto, Y. // Applied Physics Letters;10/21/1991, Vol. 59 Issue 17, p2076 

    Examines the generation of femtosecond pulses from external-cavity surface-emitting indium gallium arsenide/indium phosphide quantum well lasers. Compression of chirped optical pulses from the laser; Estimation of the lasing threshold of the laser.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics